Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection

被引：0

作者：

Geum, Dae-Myeong ^{[1
,2
]}

Kim, SangHyeon ^{[3
]}

Kim, SeongKwang ^{[2
]}

Kang, SooSeok ^{[2
]}

Kylun, JiHoon ^{[4
]}

Song, Jindong ^{[2
]}

Choi, Won Jun ^{[2
]}

Yoon, Euijoon ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul, South Korea

[2] Korea Inst Sci & Technol KIST, Seoul, South Korea

[3] Korea Adv Inst Sci & Technol, Sch Elect Engn, Daejeon, South Korea

[4] Dongguk Univ, Quantum Funct Semicond Res Ctr, Seoul, South Korea

来源：

2019 SYMPOSIUM ON VLSI TECHNOLOGY | 2019年

基金：

新加坡国家研究基金会;

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR.

引用

页码：T248 / T249

页数：2

共 5 条

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