机构:Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
Fribourg-Blanc, E
Cattan, E
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机构:Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
Cattan, E
Remiens, D
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机构:Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
Remiens, D
Dupont, M
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机构:Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
Dupont, M
Osmont, D
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机构:Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
Osmont, D
机构:
[1] Univ Valenciennes, Dept MIMM, F-59600 Maubeuge, France
[2] Off Natl Etud & Rech Aerosp, F-92322 Chatillon, France
来源:
JOURNAL DE PHYSIQUE IV
|
2001年
/
11卷
/
PR11期
关键词:
D O I:
10.1051/jp4:20011123
中图分类号:
O4 [物理学];
学科分类号:
0702 ;
摘要:
We report on the realization of relaxor ferroclectric thin films by rf magnetron sputtering deposition, We investigated fabrication of films in the solid solution of PMN (Pb(Mg1/3Nb2/3)O-3) with PT (PbTiO3), This material is the most studied among the relaxor ferroelectric family for applications in the field of microelectronics and microsystems. We chose the composition with 30% of PT, close to the morphotropic phase boundary between relaxor and normal ferroelectric behavior which exhibits good piezoelectric properties suited to actuators. We have grown the films in a cold deposition process. The substrates used were Si/SiO2 coated by Ti/Pt electrodes, This allowed to synthesize pyrochlore-free PMNT ceramic thin films at temperatures between 450 and 675 degreesC in a post-deposition conventional annealing. We performed dielectric and ferroelectric characterizations of the films with Pt upper electrodes. Dielectric constant was measured as a function of temperature (up to 155 degreesC) and frequency (1 kHz similar to 1 MHz). We obtained relative dielectric constant of the order of 1500. Relaxor behavior and ferroelectric properties are evidenced and are shown to be enhanced by annealing temperature.