EBIC imaging using scanning transmission electron microscopy: experiment and analysis

被引：7

作者：

Tanaka, Shigeyasu ^{[1
]}

Tanaka, Hiroki ^{[2
]}

Kawasaki, Tadahiro ^{[2
]}

Ichihashi, Mikio ^{[1
]}

Tanji, Takayoshi ^{[1
]}

Arafune, Koji ^{[3
]}

Ohshita, Yoshio ^{[3
]}

Yamaguchi, Masafumi ^{[3
]}

机构：

[1] Nagoya Univ, EcoTopia Sci Inst, Chigusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Dept Elect, Chigusa Ku, Nagoya, Aichi 4648603, Japan

[3] Toyota Technol Inst, Tempa Ku, Nagoya, Aichi 4888511, Japan

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / Suppl 1期

关键词：

D O I：

10.1007/s10854-008-9653-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron-beam-induced-current (EBIC) technique using scanning transmission electron microscopy (STEM) has been applied to the observation of grain boundaries in polycrystalline Si. It was shown that defects in thin regions can disappear or give bright contrast in EBIC images, but are distinct in STEM images. For the sample with a high carrier concentration, the surface effect was shown to dominate the EBIC current for a thin region. The bright contrast of the defects observed for the sample with a low carrier concentration can be attributed to the combination of the diffraction effect and the built-in electric field induced by the depletion of the entire thickness.

引用

页码：S324 / S327

页数：4

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