Quantum Computer Development with Single Ion Implantation

被引：20

作者：

Persaud, A. ^{[1
]}

Park, S. J. ^{[1
]}

Liddle, J. A. ^{[1
]}

Rangelow, I. W. ^{[2
]}

Bokor, J. ^{[1
,3
]}

Keller, R. ^{[1
]}

Allen, F. I. ^{[1
]}

Schneider, D. H. ^{[4
]}

Schenkel, T. ^{[1
]}

机构：

[1] EO Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

[2] Univ Kassel, Inst Microstruct Technol & Analyt, D-34109 Kassel, Germany

[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

[4] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

QUANTUM INFORMATION PROCESSING | 2004年 / 3卷 / 1-5期

关键词：

Electron emission; single electron devices; Coulomb blockade; ion doping; scanning probe; quantum computation;

D O I：

10.1007/s11128-004-3879-1

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Spins of single donor atoms are attractive candidates for large scale quantum information processing in silicon. Formation of devices with a few qubits is crucial for validation of basic ideas and development of a scalable architecture. We describe our development of a single ion implantation technique for placement of single atoms into device structures. Collimated highly charged ion beams are aligned with a scanning probe microscope. Enhanced secondary electron emission due to high ion charge states (e. g., P-31(13+), or Te-126(33+)) allows efficient detection of single ion impacts. Studies of electrical activation of low dose, low energy implants of P-31 in silicon show a drastic effect of dopant segregation to the SiO2/Si interface, while Si3N4/Si retards P-31 segregation. We discuss resolution limiting factors in ion placement, and process challenges for integration of single atom arrays with control gates and single electron transistors.

引用

页码：233 / 245

页数：13

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