3-D Numerical Simulation of Bipolar Amplification in Junctionless Double-Gate MOSFETs Under Heavy-Ion Irradiation

被引：34

作者：

Munteanu, Daniela ^{[1
]}

Autran, Jean-Luc ^{[1
]}

机构：

[1] CNRS, UMR CNRS IM2NP 6242, F-13384 Marseille 13, France

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2012年 / 59卷 / 04期

关键词：

Bipolar amplification; double-gate; heavy ion; junctionless transistor; single-event transient; BACKSCATTERING COEFFICIENT EXTRACTION; SINGLE-EVENT TRANSIENTS; BALLISTIC TRANSPORT; THRESHOLD VOLTAGE; COMPACT MODEL; SOI MOSFETS; DEVICES; TRANSISTORS;

D O I：

10.1109/TNS.2012.2184139

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The bipolar amplification and charge collection in Junctionless Double-Gate MOSFETs (JL-DGFET) submitted to heavy-ion irradiation are investigated. The transient response of JL-DGFET is compared to that of conventional devices operating in inversion-mode (IM-DGFET). We show that the bipolar amplification is higher in junctionless devices than in conventional inversion-mode devices mainly due to the higher doping levels in the channel which induce larger floating body effects.

引用

页码：773 / 780

页数：8

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