Epitaxially Grown Indium Phosphide Quantum Dots on a Virtual Ge Substrate Realized on Si(001)

被引：3
|
作者：
Wiesner, Michael [1 ]
Bommer, Moritz [1 ]
Schulz, Wolfgang-Michael [1 ]
Etter, Martin [1 ]
Werner, Jens [2 ]
Oehme, Michael [2 ]
Schulze, Joerg [2 ]
Jetter, Michael [1 ]
Michler, Peter [1 ]
机构：
[1] Univ Stuttgart, Inst Halbleiteropt & Funktionelle Grenzflachen, D-70569 Stuttgart, Germany
[2] Univ Stuttgart, Stuttgart Res Ctr Photon Engn SCoPE, Inst Halbleitertech, D-70569 Stuttgart, Germany
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 04期
关键词：
SILICON; INTEGRATION; LASERS; CMOS;
D O I：
10.1143/APEX.5.042001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An ultrathin virtual Ge substrate (GeVS) with low defect density was realized on CMOS-compatible Si( 001) by molecular beam epitaxy. On top, III-V layers were deposited by metal-organic vapor-phase epitaxy, at which diffusion of Ge was successfully suppressed. Nonclassical light emitters, based on InP quantum dots (QDs), were realized on a thin GaAs buffer (thickness approximate to 1 mu m). The quantum dots show emission in the red spectral region, meeting the range of the highest detection efficiency of silicon avalanche photodiodes. The decay dynamics and emission characteristics of single QDs were investigated. Autocorrelation measurements prove single-photon emission with a value of gd((2))(0) = 0.32. (C) 2012 The Japan Society of Applied Physics
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页数：3
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