Coherent anti-Stokes Raman scattering in silicon nanowire ensembles

被引:19
|
作者
Golovan, L. A. [1 ,2 ]
Gonchar, K. A. [1 ]
Osminkina, L. A. [1 ]
Timoshenko, V. Yu. [1 ]
Petrov, G. I. [3 ]
Yakovlev, V. V. [3 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 199991, Russia
[2] Natl Res Ctr Kurchatov Inst, Moscow 123182, Russia
[3] Univ Wisconsin, Dept Phys, Milwaukee, WI 53201 USA
基金
俄罗斯基础研究基金会; 美国国家科学基金会; 美国国家卫生研究院;
关键词
silicon nanowires; Raman scattering; CARS; photoluminescence; POROUS GALLIUM-PHOSPHIDE; 2ND-HARMONIC GENERATION; MICROSCOPY; ENHANCEMENT; LIGHT;
D O I
10.1002/lapl.201110099
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this letter, we, for the first time, report on coherent anti-Stokes Raman scattering (CARS) spectroscopy of an ensemble of silicon nanowires (SiNWs) formed by wet chemical etching of crystalline silicon with a mask of silver nanoparticles. The fabricated SiNWs have diameter ranged from 30 to 200 nm and demonstrate both visible and infrared photoluminecence (PL) and spontaneous Raman signal, with their intensities depending on presence of silver nanoparticles in SiNWs. The efficiency of CARS in SiNW ensembles is found to be significantly higher than that in crystalline silicon. The results of CARS and PL measurements are explained in terms of resonant excitation of the electron states attributed to silicon nanoparticles. (C) 2012 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:145 / 150
页数:6
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