Anomalous temperature dependence of photoluminescence in self-assembled InGaN quantum dots

被引：31

作者：

Ma, Jun ^{[1
]}

Ji, Xiaoli ^{[1
]}

Wang, Guohong ^{[1
]}

Wei, Xuecheng ^{[1
]}

Lu, Hongxi ^{[1
]}

Yi, Xiaoyan ^{[1
]}

Duan, Ruifei ^{[1
]}

Wang, Junxi ^{[1
]}

Zeng, Yiping ^{[1
]}

Li, Jinmin ^{[1
]}

Yang, Fuhua ^{[2
]}

Wang, Chao ^{[3
]}

Zou, Gang ^{[3
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Semicond Lighting, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China

[3] Appl Mat Inc, Santa Clara, CA 95050 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

关键词：

LOCALIZED EXCITONS; DYNAMICS; LUMINESCENCE; EFFICIENCY; GROWTH;

D O I：

10.1063/1.4754533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-assembled InGaN quantum dots (QDs) were fabricated by metal-organic chemical vapor deposition. Abnormal temperature dependence of photoluminescence (PL) was observed. The integrated PL intensity of QDs sample shows a dramatic increase in a temperature range from 160 K to 215 K and reaches the maximum value at 215 K instead of 10 K as usual. To interpret this phenomenon, a theoretic model of temperature induced carrier redistribution mechanism is designed using rate equation, which fits closely with the experimental result. It is concluded that carriers' redistribution from shallow QDs or wetting layer to deep QDs gives rise to the unique behavior for InGaN QDs structure. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754533]

引用

页数：5

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