Coverage dependence of the structure of Si deposited layers on a Si(001) surface investigated by reflection electron microscopy

被引：0
|
作者：
Doi, T [1 ]
Ichikawa, M [1 ]
Hosoki, S [1 ]
Kakibayashi, H [1 ]
机构：
[1] Hitachi Ltd, Cent Res Lab, Tokyo 1858601, Japan
来源：
SURFACE SCIENCE | 1999年 / 426卷 / 01期
关键词：
reflection electron microscopy (REM); reflection high-energy electron diffraction (RHEED); surface structure; morphology; roughness; and topography; silicon; vicinal single crystal surfaces;
D O I：
10.1016/S0039-6028(99)00172-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The structure of Si layers deposited on a Si(001) 2x1 surface at room temperature is investigated by reflection electron microscopy. After the sample heating by direct current, the structure of the deposited layer returns to the 2x1 surface at coverages below I monolayer (ML), but changes to a rough surface with the 2x1 and the 1x2 domains at coverages above 1 ML. Since the vacancies exist in the deposited layer at coverages below 1 ML, these vacancies will accelerate the recovery process of the 2 x 1 surface by enhancing adsorbate migration. (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：1 / 7
页数：7
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