Nanostructured silicon germanium thermoelectric materials prepared by mechanical alloying and sintering method have recently shown large enhancement in figure-of-merit, ZT. The fabrication of these structures often involves many parameters whose understanding and precise control is required to attain large ZT. In order to find the optimum parameters for further enhancing the ZT of this material, we have grown and studied both experimentally and theoretically different nanostructured p-type SiGe alloys. The effect of various parameters of milling process and sintering conditions on the thermoelectric properties of the grown samples were studied. The electrical and thermal properties were calculated using Boltzmann transport equation and were compared with the data of nanostructured and crystalline SiGe. It was found that the thermal conductivity not only depends on the average crystallite size in the bulk material, but also it is a strong function of alloying, porosity, and doping concentration. The Seebeck coefficient showed weak dependency on average crystallite size. The electrical conductivity changed strongly with synthesis parameters. Therefore, depending on the synthesis parameters the figure-of-merit reduced or increased by 60% compared with that of the crystalline SiGe. The model calculation showed that the lattice part of thermal conductivity in the nanostructured sample makes 80% of the total thermal conductivity. In addition, the model calculation showed that while the room temperature hole mean free path (MFP) in the nanostructured sample is dominated by the crystallite boundary scattering, at high temperature the MFP is dominated by acoustic phonon scattering. Therefore, the thermal conductivity can be further reduced by smaller crystallite size without significantly affecting the electrical conductivity in order to further enhance ZT. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Hu, Haoyang
Tan, Xiaojian
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Tan, Xiaojian
Guo, Zhe
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Guo, Zhe
Wang, Hongxiang
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Wang, Hongxiang
Zhou, Zhilong
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Zhou, Zhilong
Xiong, Chenglong
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Xiong, Chenglong
Li, Zhixiang
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Li, Zhixiang
Liu, Guoqiang
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Liu, Guoqiang
Noudem, Jacques G.
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Normandie Univ, ENSICAEN, UNICAEN, CRISMAT Lab,CNRS, F-14000 Caen, FranceChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Noudem, Jacques G.
Jiang, Jun
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Chinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 101408, Peoples R ChinaChinese Acad Sci, Ningbo Inst Mat Technol & Engn, Ningbo 315201, Peoples R China
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Bernard-Granger, Guillaume
Favier, Katia
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Favier, Katia
Soulier, Mathieu
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Soulier, Mathieu
Navone, Christelle
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Navone, Christelle
Boidot, Mathieu
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Boidot, Mathieu
Deniau, Benoit
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Deniau, Benoit
Grondin, Pauline
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Grondin, Pauline
Leforestier, Jean
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
Leforestier, Jean
Simon, Julia
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Commissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, FranceCommissariat Energie Atom & Energies Alternat, DRT LITEN DTNM SERE LTE, F-38054 Grenoble 9, France
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South KoreaSamsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South Korea
Hwang, Sungwoo
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Kim, Sang-Il
Ahn, Kyunghan
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South KoreaSamsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South Korea
Ahn, Kyunghan
Roh, Jong Wook
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South KoreaSamsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South Korea
Roh, Jong Wook
Yang, Dae-Jin
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Samsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South KoreaSamsung Elect Co Ltd, Samsung Adv Inst Technol, Funct Mat Grp, Yongin 446712, South Korea
Yang, Dae-Jin
Lee, Sang-Mock
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Lee, Sang-Mock
Lee, Kyu-Hyoung
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