The effect of synthesis parameters on transport properties of nanostructured bulk thermoelectric p-type silicon germanium alloy

被引:50
|
作者
Zamanipour, Zahra [1 ]
Shi, Xinghua [1 ]
Dehkordi, Arash M. [1 ]
Krasinski, Jerzy S. [1 ]
Vashaee, Daryoosh [1 ]
机构
[1] Oklahoma State Univ, Helmerich Adv Technol Res Ctr, Tulsa, OK 74106 USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2012年 / 209卷 / 10期
基金
美国国家科学基金会;
关键词
synthesis parameters; thermal and electrical transport; thermoelectrics; FIGURE-OF-MERIT; THERMAL-CONDUCTIVITY; ENHANCEMENT; DIFFUSION; BORON;
D O I
10.1002/pssa.201228102
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nanostructured silicon germanium thermoelectric materials prepared by mechanical alloying and sintering method have recently shown large enhancement in figure-of-merit, ZT. The fabrication of these structures often involves many parameters whose understanding and precise control is required to attain large ZT. In order to find the optimum parameters for further enhancing the ZT of this material, we have grown and studied both experimentally and theoretically different nanostructured p-type SiGe alloys. The effect of various parameters of milling process and sintering conditions on the thermoelectric properties of the grown samples were studied. The electrical and thermal properties were calculated using Boltzmann transport equation and were compared with the data of nanostructured and crystalline SiGe. It was found that the thermal conductivity not only depends on the average crystallite size in the bulk material, but also it is a strong function of alloying, porosity, and doping concentration. The Seebeck coefficient showed weak dependency on average crystallite size. The electrical conductivity changed strongly with synthesis parameters. Therefore, depending on the synthesis parameters the figure-of-merit reduced or increased by 60% compared with that of the crystalline SiGe. The model calculation showed that the lattice part of thermal conductivity in the nanostructured sample makes 80% of the total thermal conductivity. In addition, the model calculation showed that while the room temperature hole mean free path (MFP) in the nanostructured sample is dominated by the crystallite boundary scattering, at high temperature the MFP is dominated by acoustic phonon scattering. Therefore, the thermal conductivity can be further reduced by smaller crystallite size without significantly affecting the electrical conductivity in order to further enhance ZT. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2049 / 2058
页数:10
相关论文
共 50 条
  • [41] Synergistically Optimized Thermoelectric and Mechanical Properties in p-Type BiSbTe by a Microdroplet Deposition Technique
    Hu, Haoyang
    Tan, Xiaojian
    Guo, Zhe
    Wang, Hongxiang
    Zhou, Zhilong
    Xiong, Chenglong
    Li, Zhixiang
    Liu, Guoqiang
    Noudem, Jacques G.
    Jiang, Jun
    ENERGY TECHNOLOGY, 2021, 9 (04)
  • [42] Enhancing thermoelectric properties of p-type (Bi,Sb)2Te3 via porous structures
    Zhao, Hao
    Xu, Baoyin
    Ding, Zhanhui
    Xue, Yanfeng
    Yang, Jing
    Zhao, Wei
    Li, Yongfeng
    Yao, Bin
    Li, Hongdong
    Lan, Yucheng
    CERAMICS INTERNATIONAL, 2023, 49 (03) : 4305 - 4312
  • [43] Comparison of thermoelectric properties of p-type nanostructured bulk Si0.8Ge0.2 alloy with Si0.8Ge0.2 composites embedded with CrSi2 nano-inclusisons
    Zamanipour, Zahra
    Vashaee, Daryoosh
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (09)
  • [44] Comprehensive Investigation on the Thermoelectric Properties of p-Type PbTe-PbSe-PbS Alloys
    Qin, Bingchao
    Hu, Xuegao
    Zhang, Yang
    Wu, Haijun
    Pennycook, Stephen J.
    Zhao, Li-Doug
    ADVANCED ELECTRONIC MATERIALS, 2019, 5 (12):
  • [45] Thermoelectric properties of p-type Si-rich higher manganese silicide for mid-temperature applications
    Saminathan, Madhuvathani
    Palraj, Jothilal
    Wesley, Prince
    Moorthy, Manojkumar
    Ravikirana
    Perumal, Suresh
    MATERIALS LETTERS, 2021, 302
  • [46] Carrier Transport Properties of p-Type Silicon-Metal Silicide Nanocrystal Composite Films
    Ohishi, Yuji
    Miyazaki, Yoshinobu
    Muta, Hiroaki
    Kurosaki, Ken
    Yamanaka, Shinsuke
    Uchida, Noriyuki
    Tada, Tetsuya
    JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (06) : 2074 - 2079
  • [47] Thermoelectric properties of an N-type silicon-germanium alloy related to the presence of silica nodules dispersed in the microstructure
    Bernard-Granger, Guillaume
    Favier, Katia
    Soulier, Mathieu
    Navone, Christelle
    Boidot, Mathieu
    Deniau, Benoit
    Grondin, Pauline
    Leforestier, Jean
    Simon, Julia
    SCRIPTA MATERIALIA, 2014, 93 : 40 - 43
  • [48] Enhanced Thermoelectric Properties of P-Type Sn-Substituted Higher Manganese Silicides
    Jiang, Ming-Xun
    Yang, Sang-Ren
    Tsao, I-Yu
    Wardhana, Bayu Satriya
    Hsueh, Shih-Feng
    Jang, Jason Shian-Ching
    Hsin, Cheng-Lun
    Lee, Sheng-Wei
    NANOMATERIALS, 2024, 14 (06)
  • [49] Enhancing the Thermoelectric Properties of p-Type Bulk Bi-Sb-Te Nanocomposites via Solution-Based Metal Nanoparticle Decoration
    Hwang, Sungwoo
    Kim, Sang-Il
    Ahn, Kyunghan
    Roh, Jong Wook
    Yang, Dae-Jin
    Lee, Sang-Mock
    Lee, Kyu-Hyoung
    JOURNAL OF ELECTRONIC MATERIALS, 2013, 42 (07) : 1411 - 1416
  • [50] Photoacoustic studies on optical and thermal properties of p-type and n-type nanostructured porous silicon for (100) and (111) orientations
    Srinivasan, R.
    Jayachandran, M.
    Ramachandran, K.
    CRYSTAL RESEARCH AND TECHNOLOGY, 2007, 42 (03) : 266 - 274