A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor

被引:2
|
作者
Yang Yuan [1 ]
Gao Yong [1 ]
Gong Peng-Liang [1 ]
机构
[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China
关键词
D O I
10.1088/0256-307X/25/8/084
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A novel fully depleted air AlN silicon- on- insulator (SOI) metal - oxide - semiconductor field elect transistor (MOSFET) is presented, which can eliminate the self- heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The of state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28 mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.
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页码:3048 / 3051
页数:4
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