A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor

被引:2
|
作者
Yang Yuan [1 ]
Gao Yong [1 ]
Gong Peng-Liang [1 ]
机构
[1] Xian Univ Technol, Dept Elect Engn, Xian 710048, Peoples R China
关键词
D O I
10.1088/0256-307X/25/8/084
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A novel fully depleted air AlN silicon- on- insulator (SOI) metal - oxide - semiconductor field elect transistor (MOSFET) is presented, which can eliminate the self- heating effect and solve the problem that the off-state current of SOI MOSFETs increases and the threshold voltage characteristics become worse when employing a high thermal conductivity material as a buried layer. The simulation results reveal that the lattice temperature in normal SOI devices is 75K higher than the atmosphere temperature, while the lattice temperature is just 4K higher than the atmosphere temperature resulting in less severe self-heating effect in air AlN SOI MOSFETs and AlN SOI MOSFETs. The on-state current of air AlN SOI MOSFETs is similar to the AlN SOI structure, and improves 12.3% more than that of normal SOI MOSFETs. The of state current of AlN SOI is 6.7 times of normal SOI MOSFETs, while the counterpart of air AlN SOI MOSFETs is lower than that of SOI MOSFETs by two orders of magnitude. The threshold voltage change of air AlN SOI MOSFETs with different drain voltage is much less than that of AlN SOI devices, when the drain voltage is biased at 0.8 V, this difference is 28 mV, so the threshold voltage change induced by employing high thermal conductivity material is cured.
引用
收藏
页码:3048 / 3051
页数:4
相关论文
共 50 条
  • [21] An analytical symmetric double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model
    Jang, SL
    Hu, MC
    Liu, SS
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6250 - 6253
  • [22] Threshold voltage analytical model of fully depleted strained Si single Halo silicon-on-insulator metal-oxide semiconductor field effect transistor
    Xin Yan-Hui
    Liu Hong-Xia
    Fan Xiao-Jiao
    Zhuo Qing-Qing
    ACTA PHYSICA SINICA, 2013, 62 (10)
  • [23] Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Ono, Yukinori
    Nishiguchi, Katsuhiko
    Inokawa, Hiroshi
    Horiguchi, Seiji
    Takahashi, Yasuo
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 4 B (2588-2591):
  • [24] Analytical symmetric double-gate silicon-on-insulator metal-oxide-semiconductor field-effect-transistor model
    Jang, Sheng-Lyang
    Hu, Man-Chun
    Liu, Shau-Shen
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (10): : 6250 - 6253
  • [25] Charge-state control of phosphorus donors in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Ono, Y
    Nishiguchi, K
    Inokawa, H
    Horiguchi, S
    Takahashi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (4B): : 2588 - 2591
  • [26] Determination of flat-band voltages for fully depleted silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET's)
    Lyu, Jong-Son
    Nam, Kee-Soo
    Lee, Choochon
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (9 A): : 2678 - 2681
  • [27] Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate
    Lukyanchikova, N
    Garbar, N
    Smolanka, A
    Lokshin, M
    Simoen, E
    Claeys, C
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
  • [28] Reliability of partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistor under the ionizing radiation environment
    Zhou Hang
    Cui Jiang-Wei
    Zheng Qi-Wen
    Guo Qi
    Ren Di-Yuan
    Yu Xue-Feng
    ACTA PHYSICA SINICA, 2015, 64 (08)
  • [29] Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Lee, JW
    Oh, MR
    Koh, YH
    JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3912 - 3915
  • [30] Synaptic Characteristics of Fully Depleted Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors and Synapse-Neuron Arrayed Neuromorphic Hardware System
    Jeon, Yu-Rim
    Kim, Jeong-Hoon
    Akinwande, Deji
    Choi, Changhwan
    ADVANCED INTELLIGENT SYSTEMS, 2024, 6 (06)