Effect of rf power on Structural, Optical and Morphological Properties of Ultrathin Undoped ZnO films deposited by rf Magnetron Sputtering

被引：0

作者：

Kumar, J. Vinoth ^{[1
]}

Maldonado, A. ^{[1
]}

Matsumoto, Y. ^{[1
]}

Olvera, M. de la L. ^{[1
]}

机构：

[1] Inst Politecn Nacl, CINVESTAV, Ctr Invest & Estudios Avanzados, Dept Ingn Elect,SEES, Mexico City 07000, DF, Mexico

来源：

2014 11TH INTERNATIONAL CONFERENCE ON ELECTRICAL ENGINEERING, COMPUTING SCIENCE AND AUTOMATIC CONTROL (CCE) | 2014年

关键词：

ZnO; ultra thin films; sputtering; rf power; THIN-FILMS; SEED LAYER; SOLAR-CELL; PHOTOLUMINESCENCE; TRANSPARENT; GROWTH; CVD;

D O I：

暂无

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

Undoped ZnO Ultra thin films were deposited on glass substrates by rf magnetron sputtering. Thin films were deposited at various rf powers 50, 75, 100 and 125 W. The measured thickness of the films were less than 50 nm. Structural properties were studied by X-ray diffraction (XRD) which confirmed that the films were crystalline with a (002) preferential orientation. The optical properties were studied by UV-Vis spectrophotometry in the 300-1000 nm range, obtaining an average transmittance around 70 %. The AFM characterization revealed that rms roughness value increases with rf power.

引用

页数：4

共 22 条

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