Electrical Wind Force-Driven and Dislocation-Templated Amorphization in Phase-Change Nanowires

被引：154

作者：

Nam, Sung-Wook ^{[1
]}

Chung, Hee-Suk ^{[1
]}

Lo, Yu Chieh ^{[1
,2
,3
]}

Qi, Liang ^{[1
,2
,3
]}

Li, Ju ^{[1
,2
,3
]}

Lu, Ye ^{[4
]}

Johnson, A. T. Charlie ^{[1
,4
]}

Jung, Yeonwoong ^{[1
]}

Nukala, Pavan ^{[1
]}

Agarwal, Ritesh ^{[1
]}

机构：

[1] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

[2] MIT, Dept Nucl Sci & Engn, Cambridge, MA 02139 USA

[3] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[4] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

来源：

SCIENCE | 2012年 / 336卷 / 6088期

基金：

美国国家科学基金会;

关键词：

IN-SITU OBSERVATION; DEFORMATION;

D O I：

10.1126/science.1220119

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Phase-change materials undergo rapid and reversible crystalline-to-amorphous structural transformation and are being used for nonvolatile memory devices. However, the transformation mechanism remains poorly understood. We have studied the effect of electrical pulses on the crystalline-to-amorphous phase change in a single-crystalline Ge2Sb2Te5 (GST) nanowire memory device by in situ transmission electron microscopy. We show that electrical pulses produce dislocations in crystalline GST, which become mobile and glide in the direction of hole-carrier motion. The continuous increase in the density of dislocations moving unidirectionally in the material leads to dislocation jamming, which eventually induces the crystalline-to-amorphous phase change with a sharp interface spanning the entire nanowire cross section. The dislocation-templated amorphization explains the large on/off resistance ratio of the device.

引用

页码：1561 / 1566

页数：6

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