Effect of chlorine activation treatment on electron beam induced current signal distribution of cadmium telluride thin film solar cells

被引:21
作者
Zywitzki, Olaf [1 ]
Modes, Thomas [1 ]
Morgner, Henry [1 ]
Metzner, Christoph [1 ]
Siepchen, Bastian [2 ]
Spaeth, Bettina [2 ]
Drost, Christian [2 ]
Krishnakumar, Velappan [2 ]
Frauenstein, Sven [2 ]
机构
[1] Fraunhofer Inst Electron Beam & Plasma Technol FE, D-01277 Dresden, Germany
[2] CTF Solar GmbH, D-01099 Dresden, Germany
关键词
DIFFUSION;
D O I
10.1063/1.4827204
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated CdTe thin film solar cells without activation treatment and with CdCl2 activation treatment at temperatures between 370 and 430 degrees C using a constant activation time of 25 min. For this purpose, CdS/CdTe layers were deposited by closed-space-sublimation on FTO coated float glass. The solar cells were characterized by measurements of the JV characteristics and quantum efficiencies. In addition, ion polished cross sections of the solar cells were prepared for high-resolution FE-SEM imaging of the microstructure and the simultaneous registration of electron beam induced current (EBIC) signal distribution. By measurement of the EBIC signal distribution, it can be shown that without activation treatment the CdTe grain boundaries itself and grain boundary near regions exhibit no EBIC signal, whereas centres of some singular grains already show a distinct EBIC signal. In contrast, after the chlorine activation treatment, the grain boundary near regions exhibit a significant higher EBIC signal than the centre of the grains. The results can be discussed as a direct evidence for defect passivation of grain boundary near regions by the chlorine activation treatment. At activation temperature of 430 degrees C, additionally, a significant grain growth and agglomeration of the CdS layer can be recognized, which is linked with the formation of voids within the CdS layer and a deterioration of pn junction properties. (C) 2013 AIP Publishing LLC.
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页数:5
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