First-principles study of vacancy formation and migration energies in tantalum

被引:38
|
作者
Satta, A [1 ]
Willaime, F
de Gironcoli, S
机构
[1] CEA, Rech Met Phys Sect, F-91191 Gif Sur Yvette, France
[2] INFM, I-09042 Monserrato, CA, Italy
[3] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy
[4] INFM, I-34014 Trieste, Italy
[5] Scuola Int Super Studi Avanzati, I-34014 Trieste, Italy
来源
PHYSICAL REVIEW B | 1999年 / 60卷 / 10期
关键词
D O I
10.1103/PhysRevB.60.7001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The vacancy formation and migration enthalpies H-f and H-m in tantalum are calculated by means of ab initio pseudopotential techniques. The results obtained after relaxation with supercells containing 54 atomic sites (H-f = 3.0 eV and H-m = 0.8 eV) are in excellent agreement with experiments (H-f = 3.1 eV and H-m = 0.7 eV). The electronic entropy has a moderate influence on their temperature dependence. The effects of structural relaxation, which reduce H-f by 14%, are significantly larger than for group-VI elements and are typical of a normal behavior for the bcc structure. The experimental tracer self-diffusion coefficient is well reproduced within the rate theory using an estimate of the vibrational formation entropy and the attempt frequency. [S0163-1829(99)12133-7].
引用
收藏
页码:7001 / 7005
页数:5
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