Dislocation scattering in n-GaN

被引：12
|
作者：
Choi, HW [1 ]
Zhang, J [1 ]
Chua, SJ [1 ]
机构：
[1] Natl Univ Singapore, Ctr Optoelectron, Dept Elect Engn, Singapore 117576, Singapore
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 06期
关键词：
D O I：
10.1016/S1369-8001(02)00019-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The scattering of carriers due to dislocations is studied. Unlike semiconductors such as Si or GaAs, the major scattering mechanism for undoped or lightly doped samples is dislocation scattering instead of ionized impurity scattering. It was found that for GaN samples in the dislocation scattering region, the mobility is a function of the dislocation density and free carrier concentration, via a mu(dis) proportional to rootn/N-dis relationship. Temperature-variation mobility plots also indicate that a T-3/2 dependence component is present, which is also attributed to dislocation scattering. (C) 2002 Published by Elsevier Science Ltd.
引用
收藏
页码：567 / 570
页数：4
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