Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

被引：11
作者：
Hong, Hyun-Gi [1 ]
Kim, Seok-Soon
Kim, Dong-Yu
Lee, Takhee
Song, June-O
Cho, J. H.
Sone, C.
Park, Y.
Seong, Tae-Yeon
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Samsung Adv Inst Technol, Phot Program Team, Suwon 440600, South Korea
[4] Korea Univ, Div Mat Sci & Engn, Seoul 136713, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 05期
关键词：
D O I：
10.1088/0268-1242/21/5/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the I D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the fort-nation of the sidewalls of p-type electrodes.
引用
收藏
页码：594 / 597
页数：4
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