Enhanced light output of GaN-based near-UV light-emitting diodes by using nanopatterned indium tin oxide electrodes

被引：11
作者：
Hong, Hyun-Gi [1 ]
Kim, Seok-Soon
Kim, Dong-Yu
Lee, Takhee
Song, June-O
Cho, J. H.
Sone, C.
Park, Y.
Seong, Tae-Yeon
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
[2] Georgia Inst Technol, Sch Elect & Comp Engn, Atlanta, GA 30332 USA
[3] Samsung Adv Inst Technol, Phot Program Team, Suwon 440600, South Korea
[4] Korea Univ, Div Mat Sci & Engn, Seoul 136713, South Korea
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2006年 / 21卷 / 05期
关键词：
D O I：
10.1088/0268-1242/21/5/004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the enhancement of the light output of near-UV (298 nm) GaN-based light-emitting diodes (LEDs) by using nanopatterned indium tin oxide (ITO) p-type contact layers. One-dimensional (1D) and two-dimensional (2D) nanopatterns are defined using a TiO2 nano-mask, fabricated by means of a surface relief grating technique. The LEDs fabricated with the I D and 2D nanopatterned p-type electrodes produce higher output powers by 33-48% (at 20 mA) as compared to those fabricated with the unpatterned contacts. The pattern-induced improvement of the output power is described in terms of the fort-nation of the sidewalls of p-type electrodes.
引用
收藏
页码：594 / 597
页数：4
相关论文
共 50 条
[1]   Light-output enhancement of GaN-based light-emitting diodes by using hole-patterned transparent indium tin oxide electrodes [J].
Leem, DS ;
Cho, J ;
Sone, C ;
Park, Y ;
Seong, TY .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[2]   Enhancement of light output power in GaN-based light-emitting diodes using indium tin oxide films with nanoporous structures [J].
Kang, Ji Hye ;
Ryu, Jae Hyoung ;
Kim, Hyun Kyu ;
Kim, Hee Yun ;
Han, Nam ;
Lee, Mi So ;
Park, Young Jae ;
Uthirakumar, Periyayya ;
Lysak, Volodymyr V. ;
Hong, Chang-Hee .
THIN SOLID FILMS, 2011, 520 (01) :437-441
[3]   Light Output Enhancement of InGaN/GaN Light-Emitting Diodes with Contrasting Indium Tin-Oxide Nanopatterned Structures [J].
Jung, Sang Hyun ;
Song, Keun Man ;
Choi, Young Su ;
Park, Hyeong-Ho ;
Shin, Hyun-Beom ;
Kang, Ho Kwan ;
Lee, Jaejin .
JOURNAL OF NANOMATERIALS, 2013, 2013
[4]   Enhanced light output power of GaN-based light-emitting diodes by nano-rough indium tin oxide film using ZnO nanoparticles [J].
Ryu, Beo Deul ;
Uthirakumar, Periyayya ;
Kang, Ji Hye ;
Kwon, Bong Jun ;
Chandramohan, S. ;
Kim, Hyun Kyu ;
Kim, Hee Yun ;
Ryu, Jae Hyoung ;
Kim, Hyung Gu ;
Hong, Chang-Hee .
JOURNAL OF APPLIED PHYSICS, 2011, 109 (09)
[5]   GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer [J].
Lai, Wei-Chih ;
Lin, Chih-Nan ;
Lai, Yi-Chun ;
Yu, Peichen ;
Chi, Gou Chung ;
Chang, Shoou-Jinn .
Optics Express, 2014, 22 (SUPPL. 2)
[6]   GaN-based light-emitting diodes with graphene/indium tin oxide transparent layer [J].
Lai, Wei-Chih ;
Lin, Chih-Nan ;
Lai, Yi-Chun ;
Yu, Peichen ;
Chi, Gou Chung ;
Chang, Shoou-Jinn .
OPTICS EXPRESS, 2014, 22 (05) :A396-A401
[7]   Effects of Indium-Tin Oxide Film Morphologies on Light-Output Characteristics of GaN-Based Light-Emitting Diodes [J].
Shen, Yan ;
Xu, Xiangang ;
Liu, Qing ;
Zuo, Zhiyuan ;
Liu, Huan ;
Zhang, Muqing ;
Hu, Xiaobo .
JOURNAL OF NANOELECTRONICS AND OPTOELECTRONICS, 2014, 9 (04) :549-553
[8]   Enhanced output of GaN-based light-emitting diodes with stripe-contact electrodes [J].
Zhu, Yanxu ;
Xu, Chen ;
Liang, Ting ;
Da, Xiaoli ;
Zhang, Jianming ;
Chen, Libing ;
Shen, Guangdi .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[9]   Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes [J].
Liu, Yi-Jung ;
Yen, Chih-Hung ;
Hsu, Chia-Hao ;
Yu, Kuo-Hui ;
Chen, Li-Yang ;
Tsai, Tsung-Han ;
Liu, Wen-Chau .
OPTICAL REVIEW, 2009, 16 (06) :575-577
[10]   Impact of an indium oxide/indium-tin oxide mixed structure for GaN-based light-emitting diodes [J].
Yi-Jung Liu ;
Chih-Hung Yen ;
Chia-Hao Hsu ;
Kuo-Hui Yu ;
Li-Yang Chen ;
Tsung-Han Tsai ;
Wen-Chau Liu .
Optical Review, 2009, 16 :575-577
12345