Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices

被引：16

作者：

Rodriguez, A. ^{[1
]}

Gonzalez, M. B. ^{[2
]}

Miranda, E. ^{[1
]}

Campabadal, F. ^{[2
]}

Sune, J. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra 08193, Spain

[2] CSIC, CNM, IMB, Bellaterra 08193, Spain

来源：

MICROELECTRONIC ENGINEERING | 2015年 / 147卷

关键词：

Conductive filament; HfO2; Ni; Resistive random access memory (RRAM); Unipolar resistive switching; Variability; THERMAL DISSOLUTION MODEL; RESET;

D O I：

10.1016/j.mee.2015.04.038

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, the impact of temperature and switching polarity on the stability and variability of Ni/HfO2-based RRAM structures has been investigated for temperatures ranging from -40 degrees C to 175 degrees C. Special attention is given to the analysis of the variability and thermal behavior of the reset currents and voltages. The experimental results show that the temperature plays a key role in the reset operation, owing to the self-accelerated dissolution process of the conductive filament. Furthermore, for both polarities, a larger instability of the on-state current at high temperatures is evidenced. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：75 / 78

页数：4

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