共 8 条
[1]
Ahmed ASH, 2020, IEEE MTT S INT MICR, P492, DOI 10.1109/IMS30576.2020.9224012
[2]
A W-Band transmitter channel with 16dBm output power and a receiver channel with 58.6mW DC power consumption using heterogeneously integrated InP HBT and Si CMOS technologies
[J].
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS),
2019,
:654-657
[4]
A Packaged 135GHz 22nm FD-SOI Transmitter on an LTCC Carrier
[J].
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS),
2021,
:713-716
[5]
A Broadband Direct Conversion Transmitter/Receiver at D-band Using CMOS 22nm FDSOI
[J].
2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC),
2019,
:135-138
[6]
D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System
[J].
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019),
2019,
[7]
A 140GHz Two-Channel CMOS Transmitter using Low-Cost Packaging Technologies
[J].
2020 IEEE WIRELESS COMMUNICATIONS AND NETWORKING CONFERENCE WORKSHOPS (WCNCW),
2020,
[8]
Singh A, 2020, IEEE RAD FREQ INTEGR, P99, DOI [10.1109/RFIC49505.2020.9218437, 10.1109/rfic49505.2020.9218437]