A 27.5dBm EIRP D-Band Transmitter Module on a Ceramic Interposer

被引:16
作者
Farid, Ali A. [1 ]
Ahmed, Ahmed S. H. [1 ]
Rodwell, Mark J. W. [1 ]
机构
[1] Univ Calif Santa Barbara, ECE Dept, Santa Barbara, CA 93106 USA
来源
2021 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC) | 2021年
关键词
Heterogeneously integrated transmitters; D-band transmitter; D-band InP Power amplifiers; millimeter wave packaging; Ceramic interposers; LTCC carrier; D-band antenna;
D O I
10.1109/RFIC51843.2021.9490491
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a fully packaged D-band direct conversion transmitter module on a low-permittivity ceramic carrier (Kyocera GL771, epsilon(r) = 5.2, delta =0.003). The module has a broadband 135GHz 22FDX CMOS direct conversion transmitter, a medium-power (100mW Psat) high-efficiency power amplifier implemented in Teledyne 250nm InP HBT technology, and a series-fed microstrip patch antenna array. The CMOS IC is flip-chip bonded to the carrier using 50 mu m diameter copper studs, while the InP IC is wire bonded, with impedance-matching networks on the carrier compensating for the wire bonds' parasitic impedances. The module has 6GHz 3-dB modulation bandwidth and 27.5dBm measured effective isotropic radiated power (EIRP) at saturation. Under 5Gbaud, 64QAM modulation (30Gbps), the module shows 8.5% RMS error vector magnitude (EVM) at 21.5dBm EIRP. To our knowledge, the module has the highest reported EIRP and efficiency among D-band single channel transmitters.
引用
收藏
页码:43 / 46
页数:4
相关论文
共 8 条
[1]  
Ahmed ASH, 2020, IEEE MTT S INT MICR, P492, DOI 10.1109/IMS30576.2020.9224012
[2]   A W-Band transmitter channel with 16dBm output power and a receiver channel with 58.6mW DC power consumption using heterogeneously integrated InP HBT and Si CMOS technologies [J].
Ahmed, Ahmed S. H. ;
Simsek, Arda ;
Farid, Ali A. ;
Carter, Andrew D. ;
Urteaga, Miguel ;
Rodwell, Mark J. W. .
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, :654-657
[3]   A D-Band 48-Gbit/s 64-QAM/QPSK Direct-Conversion I/Q Transceiver Chipset [J].
Carpenter, Sona ;
Nopchinda, Dhecha ;
Abbasi, Morteza ;
He, Zhongxia Simon ;
Bao, Mingquan ;
Eriksson, Thomas ;
Zirath, Herbert .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2016, 64 (04) :1285-1296
[4]   A Packaged 135GHz 22nm FD-SOI Transmitter on an LTCC Carrier [J].
Farid, Ali A. ;
Ahmed, Ahmed S. H. ;
Simsek, Arda ;
Rodwell, Mark J. W. .
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2021, :713-716
[5]   A Broadband Direct Conversion Transmitter/Receiver at D-band Using CMOS 22nm FDSOI [J].
Farid, Ali A. ;
Simsek, Arda ;
Ahmed, Ahmed S. H. ;
Rodwell, Mark J. W. .
2019 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS SYMPOSIUM (RFIC), 2019, :135-138
[6]   D-band Transceiver Utilizing 70-nm GaAs-mHEMT Technology for FDD System [J].
Ito, Masaharu ;
Okawa, Takashi ;
Marumoto, Tsunehisa .
2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019), 2019,
[7]   A 140GHz Two-Channel CMOS Transmitter using Low-Cost Packaging Technologies [J].
Simsek, Arda ;
Ahmed, Ahmed S. H. ;
Farid, Ali A. ;
Soylu, Utku ;
Rodwell, Mark J. W. .
2020 IEEE WIRELESS COMMUNICATIONS AND NETWORKING CONFERENCE WORKSHOPS (WCNCW), 2020,
[8]  
Singh A, 2020, IEEE RAD FREQ INTEGR, P99, DOI [10.1109/RFIC49505.2020.9218437, 10.1109/rfic49505.2020.9218437]