Structural systematics in boron-doped single wall carbon nanotubes

被引:96
作者
Gai, PL [1 ]
Stephan, O
McGuire, K
Rao, AM
Dresselhaus, MS
Dresselhaus, G
Colliex, C
机构
[1] DuPont Co Inc, Cent Res & Dev Labs, Expt Stn, Wilmington, DE 19880 USA
[2] Univ Delaware, Dept Mat Sci & Engn, Newark, DE 19716 USA
[3] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
[4] Clemson Univ, Dept Phys & Astron, Clemson, SC 29634 USA
[5] MIT, Dept Elect Engn & Comp Sci, Cambridge, MA 02139 USA
[6] MIT, Dept Phys, Cambridge, MA 02139 USA
[7] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA
关键词
D O I
10.1039/b311696d
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report atomic level high resolution transmission electron microscopy (HRTEM), electron nanodiffraction and nano-electron energy loss spectroscopy (nano-EELS) of boron-doped carbon nanostructures obtained by laser ablation of Co/Ni/B-doped carbon targets. The observations provide direct evidence for structural systematics and atomic structural defects as a function of the B content in the target. Targets with low B concentration (below 3 at%), produced ropes of single wall carbon nanotubes (SWCNTs) with no detectable boron present in the SWCNT ropes. However, unintended N-doping of the curved honeycomb lattice was observed in the 2.5 at% B sample (which is attributed to the possible presence of small amounts of N in the targets or reaction environments), with striking consequences for doping of heteroatoms within the hexagonal lattice of the graphene layer. At higher B concentration (3.5 at% and higher), there are significant changes in the nanostructure, which exhibits defective graphite layers and a small number of double wall carbon nanotubes (DWCNTs). At the higher B concentration, boron-doping is evidenced in the form of very small amorphous B clusters trapped in graphite-like defective sites.
引用
收藏
页码:669 / 675
页数:7
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