GaN for power devices: benefits, applications, and normally-off technologies

被引：0

作者：

Longobardi, G. ^{[1
,2
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge, England

[2] Cambridge GaN Devices Ltd, Cambridge, England

来源：

2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION | 2017年

关键词：

Gallium Nitride (GaN); normally-off technologies; traps; power devices; reliability; DONOR TRAPS; ALGAN/GAN; MISFET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium Nitride (GaN) based power devices have been demonstrated to deliver higher energy efficiency than their Silicon (Si) counterparts for 200-1.2kV rated applications. The benefits of GaN technologies and their market potential will be highlighted in this paper together with the main challenges that GaN-based power systems need to overcome to reach their full potential and finally enter the market. These challenges include: (i) normally-off operation, (ii) low threshold voltage (iii) high-voltage reliability, and (iv) unstable switching behaviour. A particular focus will be given to the solutions proposed in literature for obtaining the desired normally-off operation and enhanced stability. Finally, measurement results on one of the aspects related to the reliability of the gate of a commercially available normally-off GaN transistor will be discussed.

引用

页码：11 / 18

页数：8

共 28 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Weimann, NG ;

Chu, K ;

Murphy, M ;

Schaff, WJ ;

Eastman, LF ;

Dimitrov, R ;

Wittmer, L ;

Stutzmann, M ;

Rieger, W ;

Hilsenbeck, J .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (06) :3222-3233

[2] On the physical operation and optimization of the p-GaN gate in normally-off GaN HEMT devices [J].

Efthymiou, L. ;

Longobardi, G. ;

Camuso, G. ;

Chien, T. ;

Chen, M. ;

Udrea, F. .

APPLIED PHYSICS LETTERS, 2017, 110 (12)

[3] On the Source of Oscillatory Behaviour during Switching of Power Enhancement Mode GaN HEMTs [J].

Efthymiou, Loizos ;

Camuso, Gianluca ;

Longobardi, Giorgia ;

Chien, Terry ;

Chen, Max ;

Udrea, Florin .

ENERGIES, 2017, 10 (03)

[4] GaN Technology for Power Electronic Applications: A Review [J].

Flack, Tyler J. ;

Pushpakaran, Bejoy N. ;

Bayne, Stephen B. .

JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (06) :2673-2682

[5]

Gao Y., 2004, OPTIMIZATION ALGAN G

[6] On the Identification of Buffer Trapping for Bias-Dependent Dynamic RON of AlGaN/GaN Schottky Barrier Diode With AlGaN:C Back Barrier [J].

Hu, Jie ;

Stoffels, Steve ;

Lenci, Silvia ;

Groeseneken, Guido ;

Decoutere, Stefaan .

IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) :310-313

[7]

Jin D, 2012, PROC INT SYMP POWER, P333, DOI 10.1109/ISPSD.2012.6229089

[8]

Kaneko S, 2015, PROC INT SYMP POWER, P41, DOI 10.1109/ISPSD.2015.7123384

[9] Normally-off GaN-MISFET with well-controlled threshold voltage [J].

Kuraguchi, Masahiko ;

Takada, Yoshiharu ;

Suzuki, Takashi ;

Hirose, Mayumi ;

Tsuda, Kunio ;

Saito, Wataru ;

Saito, Yasunobu ;

Omura, Ichiro .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2007, 204 (06) :2010-2013

[10]

Longobardi G., 2017, 2017 29th International Symposium on Power Semiconductor Devices and ICs (ISPSD). Proceedings, P227, DOI 10.23919/ISPSD.2017.7988918

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