Cu2ZnSn(S,Se)4 thin films prepared by thermal crystallization in S/Se atmosphere and their photovoltaic applications

被引：2
|
作者：
Yamaguchi, T. [1 ]
Oka, Y. [1 ]
Niiyama, S.
Imanishi, T.
机构：
[1] Wakayama Natl Coll Technol, Nada Ku, Gobo 6440023, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 7-8 | 2013年 / 10卷 / 7-8期
关键词：
Cu2ZnSn(S; Se)(4); thermal crystallization; solar cell; OPTICAL-PROPERTIES;
D O I：
10.1002/pssc.201200809
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Cu2ZnSn(S,Se)(4) thin films were prepared by annealing the Cu/Sn/Zn precursors in sulfur/selenium mixing atmosphere. From EPMA analysis, the S/(S+Se) mole ratio in the thin films increased with increasing the S/(S+Se) mole ratio in the sealed ampoule. XRD study showed that the thin films had a kesterite phase in Cu2ZnSn(S,Se)(4) and the a-and c-axis constants decreased with increasing the S/(S+Se) mole ratio in the thin films, following the usual linear Vegard behavior. Cu2ZnSn(S,Se)(4) thin film solar cells annealed in S/Se atmosphere with an addition of Sn demonstrated V-oc=460 mV, I-sc=6.99 mA/cm(2) and V-oc=605 mV, I-sc=5.53 mA/cm(2). (C) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1067 / 1070
页数：4
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