Localized surface plasmon enhanced deep UV-emitting of AlGaN based multi-quantum wells by Al nanoparticles on SiO2 dielectric interlayer

被引:16
作者
He, Ju [1 ]
Wang, Shuai [1 ]
Chen, Jingwen [1 ]
Wu, Feng [1 ]
Dai, Jiangnan [1 ]
Long, Hanling [1 ]
Zhang, Yi [1 ]
Zhang, Wei [1 ]
Feng, Zhe Chuan [2 ]
Zhang, Jun [1 ]
Du, Shida [1 ]
Ye, Lei [3 ]
Chen, Changqing [1 ]
机构
[1] Huazhong Univ Sci & Technol, Wuhan Natl Lab Optoelect, Wuhan, Hubei, Peoples R China
[2] Guangxi Univ, Coll Phys Sci & Technol, Guangxi Key Lab Relativist Astrophys, Lab Optoelect Mat & Detect Technol, Nanning, Peoples R China
[3] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan, Hubei, Peoples R China
基金
中国国家自然科学基金;
关键词
local surface plasmon; AlGaN multi-quantum wells; deep ultraviolet emission; Al/SiO2 composite structure; MULTIPLE-QUANTUM-WELLS; EMISSION; ALUMINUM; EFFICIENCY; RESONANCE;
D O I
10.1088/1361-6528/aab168
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this paper, we report a 2.6-fold deep ultraviolet emission enhancement of integrated photoluminescence (PL) intensity in AlGaN-based multi-quantum wells (MQWs) by introducing the coupling of local surface plasmons from Al nanoparticles (NPs) on a SiO2 dielectric interlayer with excitons and photons in MQWs at room temperature. In comparison to bare AlGaN MQWs, a significant 2.3-fold enhancement of the internal quantum efficiency, from 16% to 37%, as well as a 13% enhancement of photon extraction efficiency have been observed in the MQWs decorated with Al NPs on SiO2 dielectric interlayer. Polarization-dependent PL measurement showed that both the transverse electric and transverse magnetic mode were stronger than the original intensity in bare AlGaN MQWs, indicating a strong LSPs coupling process and vigorous scattering ability of the Al/SiO2 composite structure. These results were confirmed by the activation energy of non-radiative recombination from temperature-dependent PL measurement and the theoretical three dimensional finite difference time domain calculations.
引用
收藏
页数:7
相关论文
共 29 条
[1]  
Barnes W L, 2016, J OPT A-PURE APPL OP, V8, pS87
[2]   High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates [J].
Bryan, Zachary ;
Bryan, Isaac ;
Xie, Jinqiao ;
Mita, Seiji ;
Sitar, Zlatko ;
Collazo, Ramon .
APPLIED PHYSICS LETTERS, 2015, 106 (14)
[3]   Localized surface plasmon resonance spectroscopy of triangular aluminum nanoparticles [J].
Chan, George H. ;
Zhao, Jing ;
Schatz, George C. ;
Van Duyne, Richard P. .
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (36) :13958-13963
[4]   Deep-ultraviolet stimulated emission from AlGaN/AlN multiple-quantum-wells on nano-patterned AlN/sapphire templates with reduced threshold power density [J].
Chen, Xiang ;
Zhang, Yun ;
Yan, Jianchang ;
Guo, Yanan ;
Zhang, Shuo ;
Wang, Junxi ;
Li, Jinmin .
JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 723 :192-196
[5]   Combining surface plasmonic and light extraction enhancement on InGaN quantum-well light-emitters [J].
Fadil, Ahmed ;
Ou, Yiyu ;
Iida, Daisuke ;
Kamiyama, Satoshi ;
Petersen, Paul Michael ;
Ou, Haiyan .
NANOSCALE, 2016, 8 (36) :16340-16348
[6]   Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells [J].
Gao, Na ;
Huang, Kai ;
Li, Jinchai ;
Li, Shuping ;
Yang, Xu ;
Kang, Junyong .
SCIENTIFIC REPORTS, 2012, 2
[7]   GaN/AlGaN quantum wells for UV emission:: heteroepitaxy versus homoepitaxy [J].
Grandjean, N ;
Massies, J ;
Grzegory, I ;
Porowski, S .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (05) :358-361
[8]   Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes [J].
Hirayama, Hideki ;
Maeda, Noritoshi ;
Fujikawa, Sachie ;
Toyoda, Shiro ;
Kamata, Norihiko .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)
[9]   Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles [J].
Jang, Lee-Woon ;
Jeon, Dae-Woo ;
Sahoo, Trilochan ;
Jo, Dong-Seob ;
Ju, Jin-Woo ;
Lee, Seung-jae ;
Baek, Jong-Hyeob ;
Yang, Jin-Kyu ;
Song, Jung-Hoon ;
Polyakov, Alexander Y. ;
Lee, In-Hwan .
OPTICS EXPRESS, 2012, 20 (03) :2116-2123
[10]   Ultraviolet light-emitting diodes based on group three nitrides [J].
Khan, Asif ;
Balakrishnan, Krishnan ;
Katona, Tom .
NATURE PHOTONICS, 2008, 2 (02) :77-84