A 64-bit carry look ahead adder using pass transistor BiCMOS gates

被引:9
作者
Ueda, K [1 ]
Suzuki, H [1 ]
Suda, K [1 ]
Shinohara, H [1 ]
Mashiko, K [1 ]
机构
[1] MITSUBISHI ELECTR CORP,CHIYODA KU,TOKYO 100,JAPAN
关键词
D O I
10.1109/4.509867
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper describes a 64-bit two-stage carry look ahead adder utilizing pass transistor BiCMOS gate. The new pass transistor BiCMOS gate has a smaller intrinsic delay time than conventional BiCMOS gates. Furthermore, this: gate has a rail-to-rail output voltage, Therefore the next gate does not have a large degradation of its driving capability, The exclusive OR and NOR gate using the pass transistor BiCMOS gate shows a speed advantage over CMOS gates under a wide variance in load capacitance, The pass transistor BiCMOS gates were applied to full adders, carry path circuits, and carry select circuits, In consequence, a 64-bit two-stage carry look ahead adder was fabricated using a 0.5 mu m BiCMOS process with single-polysilicon and double-metal interconnections. A critical path delay time of 3.5 ns was observed at a supply voltage of 3.3 V. This is 25% better than the result of the adder circuit using CMOS technology, Even at the supply voltage of 2.0 V, this adder is faster than the CMOS adder.
引用
收藏
页码:810 / 818
页数:9
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