Gauge fields from strain in graphene

被引:130
作者
de Juan, Fernando [1 ,2 ]
Manes, Juan L. [3 ]
Vozmediano, Maria A. H. [4 ,5 ]
机构
[1] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[3] Univ Basque Country, Dept Fis Mat Condensada, E-48080 Bilbao, Spain
[4] Inst Ciencia Mat, Madrid 28049, Spain
[5] CSIC, E-28049 Madrid, Spain
关键词
ELECTRONIC-PROPERTIES; SUSPENDED GRAPHENE;
D O I
10.1103/PhysRevB.87.165131
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We revise the tight-binding approach to strained or curved graphene in the presence of external probes such as photoemission or scanning tunneling microscopy experiments. We show that extra terms arise in the continuum limit of the tight-binding Hamiltonian which cannot be accounted for by changes in the hopping parameters due to lattice deformations, encoded in the parameter beta. These material-independent extra couplings are of the same order of magnitude as the standard ones and have a geometric origin. They include corrections to the position-dependent Fermi velocity and to a new vector field. We show that the new vector field does not couple to electrons like a standard gauge field and that no beta-independent pseudomagnetic fields exist in strained graphene. DOI: 10.1103/PhysRevB.87.165131
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页数:6
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