Transferable Graphene Oxide by Stamping Nanotechnology: Electron-Transport Layer for Efficient Bulk-Heterojunction Solar Cells

被引:105
|
作者
Wang, Dong Hwan [1 ]
Kim, Jung Kyu [2 ,3 ]
Seo, Jung Hwa [4 ]
Park, Insun [5 ]
Hong, Byung Hee [6 ]
Park, Jong Hyeok [2 ,3 ]
Heeger, Alan J. [1 ]
机构
[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[2] Sungkyunkwan Univ, Sch Chem Engn, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, SAINT, Suwon 440746, South Korea
[4] Dong A Univ, Coll Nat Sci, Dept Mat Phys, Pusan 604714, South Korea
[5] Samsung Elect, Samsung Adv Inst Technol, Yongin 446712, South Korea
[6] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea
基金
美国国家科学基金会;
关键词
electron transport; graphene oxide; nanotechnology; solar cells; stamping transfer; POLYMER PHOTOVOLTAIC CELLS; ENERGY-LEVEL ALIGNMENT; LIGHT-EMITTING-DIODES; TANDEM POLYMER; FILMS; STABILITY; ANODES; METAL;
D O I
10.1002/anie.201209999
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:2874 / 2880
页数:7
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