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Transferable Graphene Oxide by Stamping Nanotechnology: Electron-Transport Layer for Efficient Bulk-Heterojunction Solar Cells
被引:105
作者:
Wang, Dong Hwan
[1
]
Kim, Jung Kyu
[2
,3
]
Seo, Jung Hwa
[4
]
Park, Insun
[5
]
Hong, Byung Hee
[6
]
Park, Jong Hyeok
[2
,3
]
Heeger, Alan J.
[1
]
机构:
[1] Univ Calif Santa Barbara, Ctr Polymers & Organ Solids, Santa Barbara, CA 93106 USA
[2] Sungkyunkwan Univ, Sch Chem Engn, Suwon 440746, South Korea
[3] Sungkyunkwan Univ, SAINT, Suwon 440746, South Korea
[4] Dong A Univ, Coll Nat Sci, Dept Mat Phys, Pusan 604714, South Korea
[5] Samsung Elect, Samsung Adv Inst Technol, Yongin 446712, South Korea
[6] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea
基金:
美国国家科学基金会;
关键词:
electron transport;
graphene oxide;
nanotechnology;
solar cells;
stamping transfer;
POLYMER PHOTOVOLTAIC CELLS;
ENERGY-LEVEL ALIGNMENT;
LIGHT-EMITTING-DIODES;
TANDEM POLYMER;
FILMS;
STABILITY;
ANODES;
METAL;
D O I:
10.1002/anie.201209999
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
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页码:2874 / 2880
页数:7
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