Effect of postoxidation annealing on Si/SiO2 interface roughness

被引：5

作者：

Chen, XD ^{[1
]}

Gibson, JM ^{[1
]}

机构：

[1] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1999年 / 146卷 / 08期

关键词：

D O I：

10.1149/1.1392047

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We use a plan-view transmission electron microscope technique to unambiguously image the "physical" interface position between Si and furnace grown SiO2 layers. The effect of postoxidation annealing on the interface roughness of Si/SiO2 was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a postoxidation annealing at 900 degrees C dramatically removed roughness at Si(100)/SiO2 interfaces. A model was developed to explain our experimental results based on the idea of kinetic smoothening and oxidation induced roughening. Qualitative agreement has been reached. (C) 1999 The Electrochemical Society. S0013-4651(98)05-046-0. All rights reserved.

引用

收藏

页码：3032 / 3038

页数：7

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