Preparation of Cu2ZnSnS4 film by sulfurizing solution deposited precursors

被引：23

作者：

Gao, Chao ^{[1
]}

Shen, Honglie ^{[1
]}

Jiang, Feng ^{[1
]}

Guan, Hao ^{[1
]}

机构：

[1] Nanjing Univ Aeronaut & Astronaut, Coll Mat Sci & Technol, Nanjing 210016, Jiangsu, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2012年 / 261卷

基金：

美国国家科学基金会;

关键词：

Cu2ZnSnS4; Thin film; Low cost method; Solution deposited precursor; SOLAR-CELLS; THIN-FILMS; NANOCRYSTALS; BINARY; LAYER;

D O I：

10.1016/j.apsusc.2012.07.137

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Cu2ZnSnS4 (CZTS) film was obtained by sulfurizing (Cu, Sn)S/ZnS structured precursor that was prepared by a combination of the successive ionic layer adsorption and reaction method and the chemical bath deposition method. Pure Cu2ZnSnS4 phase was obtained when the precursor was annealed at 500 degrees C for 2 h. The structure, composition, morphology and optical properties of the CZTS film were studied. The results show that the CZTS film has a relatively compact morphology, and the composition of the film is close to the stoichiometric ratio of Cu2ZnSnS4. The film presents a large optical absorption coefficient (larger than 10(4) cm(-1) when the photo energy is beyond 1.47 eV). The optical band-gap of the film is around 1.56 eV. This method is considered a potential way to prepare high quality CZTS film. (C) 2012 Elsevier B. V. All rights reserved.

引用

页码：189 / 192

页数：4

共 19 条

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