Characterization of GaAs layers grown by molecular beam epitaxy

被引：0
|
作者：
Fuentes, J [1 ]
Leon, R [1 ]
Montaigne, A [1 ]
Gonzalez, PP [1 ]
Serra, A [1 ]
Egorov, A [1 ]
Mendoza, J [1 ]
PenaChapa, JL [1 ]
Bartolo, P [1 ]
机构：
[1] UNIV HAVANA,IMRE,VEDADO 10400,LA HABANA,CUBA
来源：
SURFACES, VACUUM, AND THEIR APPLICATIONS | 1996年 / 378期
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学]; O56 [分子物理学、原子物理学];
学科分类号：
070203 ; 070304 ; 081704 ; 1406 ;
摘要：
引用
收藏
页码：245 / 248
页数：4
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