Effect of thermal annealing on optical properties of implanted GaAs

被引：7
作者：
Kulik, M
Komarov, FF
Maczka, D
机构：
[1] Marie Curie Sklodowska Univ, Inst Phys, PL-20031 Lublin, Poland
[2] State Univ, Inst Phys, Minsk, BELARUS
来源：
ACTA PHYSICA POLONICA A | 1999年 / 96卷 / 01期
关键词：
D O I：
10.12693/APhysPolA.96.131
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
GaAs samples doped with indium atoms by ion implantation and thermal annealed were studied using a channelling method, Rutherford backscattering, and an ellipsometry. From these measurements it was observed that the layer implanted with 3 x 10(16) cm(-2) indium dose was totally damaged and its optical properties, namely a refraction index n and an extinction coefficient k, corresponded to the amorphous material. Subsequent isobaric heating of the implanted samples resulted in recovery of the crystalline structures with simultaneous change of the n and k index values.
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页码：131 / 135
页数：5
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