Improved Mobility and Transmittance of Room-Temperature-Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Postfabrication Anneals

被引：14
|
作者：
Alford, T. L. [1 ]
Gadre, M. J. [1 ]
Vemuri, Rajitha N. P. [1 ]
机构：
[1] Arizona State Univ, Sch Engn Matter Transport & Energy, Tempe, AZ 85287 USA
来源：
JOM | 2013年 / 65卷 / 04期
基金：
美国国家科学基金会;
关键词：
TRANSPARENT; TRANSISTORS;
D O I：
10.1007/s11837-013-0569-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thin films of amorphous indium gallium zinc oxide with high transmittance were deposited at room temperature onto flexible polymer substrates. Postdeposition anneals were performed at low temperatures in different ambients to obtain films with one of the highest transmittance and mobility values reported in the literature. As-deposited and postanneal films were characterized for electrical and optical properties. Oxygen anneal degraded the electrical performance of the films, which was recovered by succeeding vacuum anneals. A surface scattering model is proposed to determine the relation between mobility and carrier concentrations at low values of carrier concentrations. This model takes into account electronic scattering as a result of grain structure and morphology.
引用
收藏
页码：519 / 524
页数：6
相关论文
共 50 条
  • [1] Improved Mobility and Transmittance of Room-Temperature-Deposited Amorphous Indium Gallium Zinc Oxide (a-IGZO) Films with Low-Temperature Postfabrication Anneals
    T. L. Alford
    M. J. Gadre
    Rajitha N. P. Vemuri
    JOM, 2013, 65 : 519 - 524
  • [2] Highest transmittance and high-mobility amorphous indium gallium zinc oxide films on flexible substrate by room-temperature deposition and post-deposition anneals
    Gadre, Mandar J.
    Alford, T. L.
    APPLIED PHYSICS LETTERS, 2011, 99 (05)
  • [3] Room-temperature-deposited indium-zinc oxide thin films with controlled conductivity
    Lim, Wantae
    Wang, Yu-Lin
    Ren, F.
    Norton, D. P.
    Kravchenko, I. I.
    Zavada, J. M.
    Pearton, S. J.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (09) : H267 - H269
  • [4] High mobility amorphous/nanocrystalline indium zinc oxide deposited at room temperature
    Fortunato, E
    Pimentel, A
    Gonçalves, A
    Marques, A
    Martins, R
    THIN SOLID FILMS, 2006, 502 (1-2) : 104 - 107
  • [5] Low temperature annealed amorphous indium gallium zinc oxide (a-IGZO) as a pH sensitive layer for applications in field effect based sensors
    Kumar, Narendra
    Kumar, Jitendra
    Panda, Siddhartha
    AIP ADVANCES, 2015, 5 (06):
  • [6] High mobility nanocrystalline indium zinc oxide deposited at room temperature
    Fortunato, E
    Pimentel, A
    Gonçalves, A
    Marques, A
    Martins, R
    INTEGRATION OF ADVANCED MICRO-AND NANOELECTRONIC DEVICES-CRITICAL ISSUES AND SOLUTIONS, 2004, 811 : 437 - 442
  • [7] RF characteristics of room-temperature-deposited, small gate dimension indium zinc oxide TFTs
    Wang, Yu-Lin
    Covert, L. N.
    Anderson, T. J.
    Lim, Wantae
    Lin, J.
    Pearton, S. J.
    Norton, D. P.
    Zavada, J. M.
    Ren, F.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (03) : H60 - H62
  • [8] Low-Temperature Photochemically Activated Amorphous Indium-Gallium-Zinc Oxide for Highly Stable Room-Temperature Gas Sensors
    Jaisutti, Rawat
    Kim, Jaeyoung
    Park, Sung Kyu
    Kim, Yong-Hoon
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (31) : 20192 - 20199
  • [9] Indium zinc oxide thin films deposited by sputtering at room temperature
    Lim, Wantae
    Wang, Yu-Lin
    Ren, F.
    Norton, D. P.
    Kravchenko, I. I.
    Zavada, J. M.
    Pearton, S. J.
    APPLIED SURFACE SCIENCE, 2008, 254 (09) : 2878 - 2881
  • [10] Instability dependent upon bias and temperature stress in amorphous-indium gallium zinc oxide (a-IGZO) thin-film transistors
    Choi, Kwang-Il
    Nam, Dong-Ho
    Park, Jeong-Gyu
    Park, Sung-Su
    Choi, Won-Ho
    Han, In-Shik
    Jeong, Jae-Kyeong
    Lee, Hi-Deok
    Lee, Ga-Won
    JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2010, 18 (01) : 108 - 112
12345