Photovoltaic effect in Si/SiO2 superlattice microdisk array solar cell structure

被引：3

作者：

Yamada, Shigeru ^{[1
]}

Shirayanagi, Yusuke ^{[1
]}

Narihara, Teruhiko ^{[1
]}

Kumada, Masatoshi ^{[1
]}

Porponth, Sichanugrist ^{[1
,3
]}

Ichikawa, Yukimi ^{[1
,3
]}

Miyajima, Shinsuke ^{[2
]}

Konagai, Makoto ^{[1
,3
]}

机构：

[1] Japan Sci & Technol Agcy JST, FUTURE PV Project, Koriyama, Fukushima 9630215, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Meguro Ku, Tokyo 1528552, Japan

[3] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2020年 / 145卷

关键词：

Silicon; Superlattices; Microdisks; Solar cells; Thin films; SUGGESTED INTERPRETATION; TEMPERATURE-DEPENDENCE; QUANTUM CONFINEMENT; EFFICIENCY; CRYSTALLIZATION; CONDUCTIVITY; TERMS; GAP; SI;

D O I：

10.1016/j.spmi.2020.106640

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Silicon/silicon dioxide (Si/SiO2) superlattice microdisk (SLMD) array solar cell structures were fabricated by a photolithography process. An open-circuit voltage of 661 mV was obtained from a Si/SiO2 SLMD array solar cell using a superlattice composed of 5.6-nm-thick Si layers and 2.5-nm-thick SiO2 layers. This open-circuit voltage is significantly higher than that of polycrystalline silicon microdisk solar cells. We also investigated the quantum efficiency and the temperature dependence of the open-circuit voltage. Detailed analysis suggests that the bandgap of the Si/SiO2 superlattice is approximately 1.4 eV, which is larger than that of c-Si.

引用

页数：8

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