Conductance of a quantum dot in the Kondo regime connected to dirty wires

被引：5
作者：
Camjayi, Alberto [1 ]
Arrachea, Liliana
机构：
[1] Univ Buenos Aires, Dept Fis, FCEyN, RA-1428 Buenos Aires, DF, Argentina
来源：
PHYSICAL REVIEW B | 2012年 / 86卷 / 23期
关键词：
IMPURITY;
D O I：
10.1103/PhysRevB.86.235143
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel disordered wires by means of a quantum Monte Carlo method. We model the quantum dot by the Hubbard-Anderson impurity and the wires by the one-dimensional Anderson model with diagonal disorder within a length. We present a complete description of the probability distribution function of the conductance within the Kondo regime. DOI: 10.1103/PhysRevB.86.235143
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页数：6
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