Low-voltage, high-speed AlSb InAsSb HEMTs

被引：21

作者：

Boos, JB ^{[1
]}

Yang, MJ ^{[1
]}

Bennett, BR ^{[1
]}

Park, D ^{[1
]}

Kruppa, W ^{[1
]}

Bass, R ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 10期

关键词：

D O I：

10.1049/el:19990536

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Antimonide-based HEMTs have heen fabricated with an InAsSb channel. Infra-red photoluminescence measurements at 5K confirm that the addition of Sb changes the band structure from a staggered type II heterojunction lineup to a type I. These HEMTs with 0.1 mu m gate length exhibit decreased output conductance and improved voltage gain. At V-DS = 0.6V, a microwave transconductance of 700mS/mm and an output conductance of 110mS/mm were obtained corresponding to a voltage gain of 6.

引用

页码：847 / 848

页数：2

共 4 条

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