Optical and structural properties of laser annealed Er-doped amorphous silicon thin films

被引：4

作者：

Bell, MJV ^{[1
]}

Nunes, LAO ^{[1
]}

Zanatta, AR ^{[1
]}

机构：

[1] Univ Fed Sao Carlos, Inst Fis Sao Carlos, BR-13560250 Sao Carlos, SP, Brazil

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 01期

关键词：

D O I：

10.1063/1.370788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Er-doped hydrogenated amorphous silicon (a-SiEr:H) thin films were deposited by cosputtering. After deposition, the samples were submitted to annealing treatments employing Ar+ and Nd-YAG lasers. Thermal anneals in a temperature-controlled furnace were also performed for comparison purposes. Photoluminescence, optical absorption in the infrared energy region, and Raman spectroscopies were carried out after each annealing treatment. Based on the experimental data, some mechanisms associated with the different annealing procedures and Er3+ ion excitation are proposed and discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)03113-8].

引用

页码：701 / 703

页数：3

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