STRUCTURAL CHANGES IN POROUS Si INDUCED BY HIGH ENERGY ELECTRON AND X-RAY PHOTONS IRRADIATION

被引：0

作者：

Mockeviciene, S. ^{[1
]}

Prosycevas, I.

Adliene, D. ^{[1
]}

Baltusnikas, A.

Kaciulyte, Vaida ^{[1
]}

Pikaite, Rita ^{[1
]}

机构：

[1] Kaunas Univ Technol, LT-51368 Kaunas, Lithuania

来源：

3RD INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2010 | 2010年

关键词：

porous silicon; X-ray; electron; irradiation; radiation effects; SILICON; PHOTOLUMINESCENCE;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous Si layers have been produced on Si (111) targets by means of vapour phase etching method using a liquid mixture of HF and HNO3 acids in different concentrations. Radiation impact on porous Si structures has been investigated after their irradiation with high energy electron and X-ray photons beams. Irradiation was performed with the aim to produce porous Si layers with distinguished structures and properties that are achievable through variation of technological product fabrication parameters and irradiation dose. It was found that porous Si structures containing nanocrystalline Si has been produced. Crystallite size was reduced after the irradiation of experimental samples however porosity of the irradiated samples became higher.

引用

页码：296 / 299

页数：4

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