pH sensor based on an AlGaN/GaN HEMT structure

被引：2

作者：

Guo, Zhibo ^{[1
]}

Wang, Lai ^{[1
]}

Hao, Zhibiao ^{[1
]}

Luo, Yi ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Integrated Optoelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

2011 CHINESE MATERIALS CONFERENCE | 2012年 / 27卷

关键词：

AlGaN/GaN HEMT; pH sensing; sensitivity; linear region; saturation region;

D O I：

10.1016/j.proeng.2011.12.507

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

pH sensor based on a gateless AlGaN/GaN high electron mobility transistor (HEMT) structure is reported in this paper. The sensing characteristics of the devices have been measured in hydrochloric acid solutions in pH=2 to pH=6 respectively. The device with gate sensing area of 250x400 mu m(2) shows sensitivity of 0.0944 mA/mm-pH in the linear region (V-ds=0.5 V), while the one with gate sensing area of 15x400 mu m(2) shows sensitivity of 2.19 mA/mm-pH in the saturation region (V-ds=13 V). The results show that the carrier sheet density of the two dimensional electron gas (2DEG) could be effectively tuned by the solutions with different H+ concentration at AlGaN gate region, and higher sensitivity could be obtained in the saturation region than in the linear region. It is analyzed that the device with shorter gate length could reach saturation at lower voltage. Furthermore, sensing in the saturation region helps to overcome the measurement error caused by voltage fluctuations. (C) 2011 Published by Elsevier Ltd. Selection and peer-review under responsibility of Chinese Materials Research Society.

引用

页码：693 / 697

页数：5

共 4 条

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