X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

被引:35
作者
Chang, Seo Hyoung [1 ]
Kim, Jungho [2 ]
Phatak, Charudatta [3 ]
D'Aquila, Kenneth [1 ,3 ,4 ]
Kim, Seong Keun [5 ,6 ,7 ]
Kim, Jiyoon [1 ,8 ]
Song, Seul Ji [6 ,7 ]
Hwang, Cheol Seong [6 ,7 ]
Eastman, Jeffrey A. [1 ]
Freeland, John W. [2 ]
Hong, Seungbum [1 ,3 ,8 ]
机构
[1] Argonne Natl Lab, Div Mat Sci, Lemont, IL 60439 USA
[2] Argonne Natl Lab, Adv Photon Source, Lemont, IL 60439 USA
[3] Argonne Natl Lab, Nanosci & Technol Div, Lemont, IL 60439 USA
[4] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[5] Korea Inst Sci & Technol, Seoul 136791, South Korea
[6] Seoul Natl Univ, Dept Mat Sci & Engn, WCU Hybrid Mat Program, Seoul 151744, South Korea
[7] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151744, South Korea
[8] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
基金
新加坡国家研究基金会;
关键词
resistive switching; X-ray irradiation; photovoltaic effect; Magneli phase; Joule heating; defect generation; MEMRISTIVE DEVICES;
D O I
10.1021/nn405867p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. We found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. Understanding X-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
引用
收藏
页码:1584 / 1589
页数:6
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