Microstructure and growth mechanism of multi-layer graphene standing on polycrystalline SiC microspheres

被引：16

作者：

Ma, Jun ^{[1
]}

Li, Gong-yi ^{[1
]}

Chu, Zeng-yong ^{[1
]}

Li, Xiao-dong ^{[1
]}

Li, Yi-he ^{[1
]}

Hu, Tian-jiao ^{[1
]}

机构：

[1] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

来源：

CARBON | 2014年 / 69卷

基金：

中国国家自然科学基金;

关键词：

EPITAXIAL GRAPHENE; SILICON-CARBIDE; LEAVES;

D O I：

10.1016/j.carbon.2013.12.034

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Multi-layer graphene standing on polycrystalline SiC microspheres was prepared by pyrolyzing liquid polysilacarbosilane. The lateral dimension of the multi-layer graphene is similar to 100 nm and the average diameter of the microspheres is similar to 0.9 mu m. The growth of the multi-layer graphene is proposed to be initiated by phase separation of the microspheres, and facilitated with both crystallization inside and chemical vapor deposition outside. This method offers an alternative way to prepare multi-layer graphene on SiC without the need for 4H- or 6H-SiC crystals. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：634 / 637

页数：4

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