Superior Electrostrictive Strain Behavior of Antiferroelectric (Pb, La)(Zr, Ti)O3 Thick Film Microcantilevers for MEMS Device Applications

被引：7

作者：

Chou, Xiujian ^{[1
]}

Guan, Xinfeng ^{[1
]}

Lv, Yongbo ^{[1
]}

Geng, Wenping ^{[1
]}

Liu, Jun ^{[1
]}

Xue, Chenyang ^{[1
]}

Zhang, Wendong ^{[1
]}

机构：

[1] North Univ China, Minist Educ, Key Lab Instrumentat Sci & Dynam Measurement, Taiyuan 030051, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 09期

基金：

中国国家自然科学基金;

关键词：

Antiferroelectric thick film; electrostrictive strain; micro-cantilever; phase transition; tip deflection; CANTILEVERS; CERAMICS; FATIGUE;

D O I：

10.1109/LED.2013.2272211

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The microcantilevers based on the antiferroelectric (AFE) (Pb0.97La0.02)(Zr0.95Ti0.05)O-3 (PLZT) thick films were fabricated by bulk silicon micromachining process. The conspicuous electrostrictive strain properties with phase transition of the AFE PLZT films induced by electric field were investigated. The resonant vibration velocity and tip deflection on a 650- mu m-long cantilever were up to 6767 mm/s and 45.7 mu m, under the square wave excitation with the voltage of 40 V, matched to the AFE-ferroelectric phase transition electric field of 210 kV/cm. The ratio of induced tip displacement and cantilever length per unit voltage [d(delta)/L/dV] was proposed to show the mutation response ability. In addition, the new AFE PLZT microcantilevers exhibited superior value of 10.77/kV, further higher than the traditional ones. Extensive application requirements for microdevices would be met in various fields of microelectromechanical systems.

引用

页码：1187 / 1189

页数：3

共 10 条

[1]

Baomin Xu, 1998, Integrated Ferroelectrics, V22, P545, DOI 10.1080/10584589808208073

[2]

Cheng C., 1999, FERROELECTRICS, V232, P159

[3] Preparation and dielectric properties of highly preferred-(100) orientation (Pb, La)(Zr, Ti)O3 antiferroelectric thick films by sol-gel processing [J].