Beryllium-containing materials for II-VI laser diodes

被引：4
|
作者：
Waag, A
Litz, T
Fischer, F
Lugauer, HJ
Gunshor, RL
Landwehr, G
机构：
来源：
PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES V | 1997年 / 2994卷
关键词：
D O I：
10.1117/12.275564
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Beryllium containing ZnSe-based compound semiconductors introduce substantial additional degrees of freedom for the design of wide gap II-VI heterostructures. Interesting aspects are the lattice matching of BeTe with its high lying valence band and high p-type dopability for the growth of graded gap contacts capable of carrying high current densities, as well as the expected strengthening of quaternary beryllium compounds like BeMgZnSe as compared to the IT-VI materials used on the basis of ZnMgSSe. They have a large covalency and therefore large bond energy. The-covalency of BeSe e.g. is expected to be as high as the one of GaN. The fabrication of light emitting devices like LEDs and laser diodes is reported.
引用
收藏
页码：32 / 42
页数：11
相关论文
共 50 条
  • [31] MOVPE of II-VI materials
    Irvine, SJC
    Stafford, A
    Ahmed, MU
    Prete, P
    Berrigan, R
    PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 1997, 35 (2-4): : 177 - 206
  • [32] Release of Beryllium from Beryllium-Containing Materials in Artificial Skin Surface Film Liquids
    Stefaniak, Aleksandr B.
    Virji, M. Abbas
    Day, Gregory A.
    ANNALS OF OCCUPATIONAL HYGIENE, 2011, 55 (01) : 57 - 69
  • [33] Investigation of degradation in beryllium chalcogenide II-VI semiconductors
    Tsai, W. C.
    Cheng, C. L.
    Chen, T. T.
    Chen, Y. F.
    Huang, Y. S.
    Firszt, F.
    Meczynska, H.
    Marasek, A.
    Legowski, S.
    Strzakolwski, K.
    APPLIED PHYSICS LETTERS, 2006, 89 (12)
  • [34] Wavelength-dependent optical degradation of green II-VI laser diodes
    Vogelgesang, R
    Liang, JJ
    Wagner, V
    Lugauer, HJ
    Geurts, J
    Waag, A
    Landwehr, G
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1351 - 1353
  • [35] High temperature operation of II-VI ridge-waveguide laser diodes
    Legge, M
    Bader, S
    Bacher, G
    Lugauer, HJ
    Waag, A
    Forchel, A
    Landwehr, G
    ELECTRONICS LETTERS, 1998, 34 (21) : 2032 - 2034
  • [36] Reduction of extended defects in II-VI blue-green laser diodes
    Ng, TB
    Chu, CC
    Han, J
    Hua, GC
    Gunshor, RL
    Ho, E
    Warlick, EL
    Kolodziejski, LA
    Nurmikko, AV
    JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 552 - 557
  • [37] Reduction of extended defects in II-VI blue-green laser diodes
    Ng, T.B.
    Chu, C.C.
    Han, J.
    Hua, G.C.
    Gunshor, R.L.
    Ho, E.
    Warlick, E.L.
    Kolodziejski, L.A.
    Nurmikko, A.V.
    Journal of Crystal Growth, 1997, 175-176 (pt 1): : 552 - 557
  • [38] Current status and perspective of ZnMgSSe-based II-VI laser diodes
    Ishibashi, A
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VII, 1999, 3625 : 19 - 30
  • [39] Degradation physics of II-VI blue-green laser diodes and LEDs
    Chuang, SL
    Ishibashi, A
    Nakayama, N
    Taniguchi, S
    Nakano, K
    PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES VI, PTS 1 AND 2, 1998, 3283 : 69 - 78
  • [40] DELAY IN LASING OF WIDE-GAP II-VI LASER-DIODES
    OZAWA, M
    EGAN, A
    ISHIBASHI, A
    SOLID STATE COMMUNICATIONS, 1995, 94 (02) : 87 - 91
12345