Highly sensitive flexible NO2sensor composed of vertically aligned 2D SnS2operating at room temperature

被引:47
作者
Pyeon, Jung Joon [1 ,2 ]
Baek, In-Hwan [1 ,3 ,4 ]
Song, Young Geun [1 ]
Kim, Gwang Su [1 ,2 ]
Cho, Ah-Jin [1 ]
Lee, Ga-Yeon [5 ]
Han, Jeong Hwan [6 ]
Chung, Taek-Mo [5 ]
Hwang, Cheol Seong [3 ,4 ]
Kang, Chong-Yun [1 ,2 ]
Kim, Seong Keun [1 ]
机构
[1] Korea Inst Sci & Technol, Ctr Elect Mat, Seoul 02792, South Korea
[2] Korea Univ, KU KIST Grad Sch Converging Sci & Technol, Seoul 02841, South Korea
[3] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 08826, South Korea
[4] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
[5] Korea Res Inst Chem Technol, Div Adv Mat, Daejeon 34114, South Korea
[6] Seoul Natl Univ Sci & Technol, Dept Mat Sci & Engn, Seoul 01811, South Korea
关键词
ATOMIC LAYER; 2-DIMENSIONAL SNS2; NO2; PERFORMANCE; SENSORS; FILMS; HETEROJUNCTIONS; DEPOSITION;
D O I
10.1039/d0tc02242j
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Gas sensors for Internet of Things applications should meet two requisites - low power consumption and easy mounting universally. To satisfy the conditions, gas sensors need to operate at lower temperature and be flexible. In this study, we demonstrate a flexible gas sensor operating at room temperature using vertically aligned two-dimensional SnS(2)nanomaterials. The atomic layer deposition (ALD) technique allows direct growth of SnS(2)on a plastic substrate. The morphological structure of SnS(2)is engineered by effecting changes in the growth temperature and substrate surface, which leads to the excellent sensing performance with respect to NO(2)gas along with superior gas selectivity. The gas response is as high as 309 at 1 ppm of NO(2)at room temperature, and a reliably high response is also observed even below 500 ppb of NO2. The fabricated flexible gas sensor exhibits comparable sensing performance and stability upon bending. Furthermore, the ALD achieves excellent uniformity in both the structural and electrical properties of SnS(2)over a 4 in. wafer, which is essential for mass production. Therefore, we believe that this work would contribute to realizing the practical application of highly sensitive flexible gas sensors.
引用
收藏
页码:11874 / 11881
页数:8
相关论文
共 36 条
[1]   Cation-Regulated Transformation for Continuous Two-Dimensional Tin Monosulfide [J].
Baek, In-Hwan ;
Pyeon, Jung Joon ;
Lee, Ga-Yeon ;
Song, Young Geun ;
Lee, Hansol ;
Won, Sung Ok ;
Han, Jeong Hwan ;
Kang, Chong-Yun ;
Chung, Taek-Mo ;
Hwang, Cheol Seong ;
Kim, Seong Keun .
CHEMISTRY OF MATERIALS, 2020, 32 (06) :2313-2320
[2]   Synthetic approaches to two-dimensional transition metal dichalcogenide nanosheets [J].
Brent, Jack R. ;
Savjani, Nicky ;
O'Brien, Paul .
PROGRESS IN MATERIALS SCIENCE, 2017, 89 :411-478
[3]   Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates [J].
Chen, Jianyi ;
Tang, Wei ;
Tian, Bingbing ;
Liu, Bo ;
Zhao, Xiaoxu ;
Liu, Yanpeng ;
Ren, Tianhua ;
Liu, Wei ;
Geng, Dechao ;
Jeong, Hu Young ;
Shin, Hyeon Suk ;
Zhou, Wu ;
Loh, Kian Ping .
ADVANCED SCIENCE, 2016, 3 (08)
[4]   Highly Enhanced Gas Adsorption Properties in Vertically Aligned MoS2 Layers [J].
Cho, Soo-Yeon ;
Kim, Seon Joon ;
Lee, Youhan ;
Kim, Jong-Seon ;
Jung, Woo-Bin ;
Yoo, Hae-Wook ;
Kim, Jihan ;
Jung, Hee-Tae .
ACS NANO, 2015, 9 (09) :9314-9321
[5]   Improved nucleation of TiN atomic layer deposition films on SILK low-k polymer dielectric using an Al2O3 atomic layer deposition adhesion layer [J].
Elam, JW ;
Wilson, CA ;
Schuisky, M ;
Sechrist, ZA ;
George, SM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :1099-1107
[6]   Metal Sulfides as Sensing Materials for Chemoresistive Gas Sensors [J].
Gaiardo, Andrea ;
Fabbri, Barbara ;
Guidi, Vincenzo ;
Bellutti, Pierluigi ;
Giberti, Alessio ;
Gherardi, Sandro ;
Vanzetti, Lia ;
Malagu, Cesare ;
Zonta, Giulia .
SENSORS, 2016, 16 (03)
[7]   Atomic Layer Deposition: An Overview [J].
George, Steven M. .
CHEMICAL REVIEWS, 2010, 110 (01) :111-131
[8]   Engineering the crystallinity of tin disulfide deposited at low temperatures [J].
Ham, Giyul ;
Shin, Seokyoon ;
Park, Joohyun ;
Lee, Juhyun ;
Choi, Hyeongsu ;
Lee, Seungjin ;
Jeon, Hyeongtag .
RSC ADVANCES, 2016, 6 (59) :54069-54075
[9]   Tuning the Electronic Structure of Tin Sulfides Grown by Atomic Layer Deposition [J].
Ham, Giyul ;
Shin, Seokyoon ;
Park, Joohyun ;
Choi, Hagyoung ;
Kim, Jinseo ;
Lee, Young-Ahn ;
Seo, Hyungtak ;
Jeon, Hyeongtag .
ACS APPLIED MATERIALS & INTERFACES, 2013, 5 (18) :8889-8896
[10]   High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity [J].
Kang, Kibum ;
Xie, Saien ;
Huang, Lujie ;
Han, Yimo ;
Huang, Pinshane Y. ;
Mak, Kin Fai ;
Kim, Cheol-Joo ;
Muller, David ;
Park, Jiwoong .
NATURE, 2015, 520 (7549) :656-660