Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

被引：141

作者：

Luebben, Michael ^{[1
]}

Karakolis, Panagiotis ^{[2
]}

Ioannou-Sougleridis, Vassilios ^{[2
]}

Normand, Pascal ^{[2
]}

Dimitrakis, Panagiotis ^{[2
]}

Valov, Ilia ^{[1
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst Elect Mat PGI 7, D-52425 Julich, Germany

[2] NCSR Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 40期

关键词：

electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories; CONDUCTIVE FILAMENT; CIRCUITS; IMPACT;

D O I：

10.1002/adma.201502574

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.

引用

页码：6202 / 6207

页数：6

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