Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOx Based Memristive Devices

被引:141
作者
Luebben, Michael [1 ]
Karakolis, Panagiotis [2 ]
Ioannou-Sougleridis, Vassilios [2 ]
Normand, Pascal [2 ]
Dimitrakis, Panagiotis [2 ]
Valov, Ilia [1 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst Elect Mat PGI 7, D-52425 Julich, Germany
[2] NCSR Demokritos, Inst Nanosci & Nanotechnol, Athens 15310, Greece
关键词
electrochemical metallization memories; graphene; interfaces; redox-based resistive switching memories (ReRAM); valence change memories; CONDUCTIVE FILAMENT; CIRCUITS; IMPACT;
D O I
10.1002/adma.201502574
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
By modification of the electrode-solid-electrolyte interface with graphene, transit from valence change memories (VCM) to electrochemical metallization memories (ECM) in the cell Ta(C)/Ta2O5/Pt is demonstrated, thus, bridging both mechanisms. The ECM operation is discussed in the light of Ta-cation mobility in TaOx. The crucial role of electrochemical processes and moisture in the resistive switching process is also highlighted.
引用
收藏
页码:6202 / 6207
页数:6
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