Simple method to extract intrinsic and extrinsic base-collector capacitances of bipolar transistors

被引：3

作者：

Lee, SH ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Kyungki 449791, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2004年 / 51卷 / 04期

关键词：

bipolar transistors; capacitance measurement; modeling; parameter extraction;

D O I：

10.1109/TED.2004.823801

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new and direct method is proposed to determine intrinsic (C(mu)) and extrinsic (C(mux)) base-collector junction capacitances of bipolar junction transistors (BJTs). The voltage dependent curves of C(mu) and C(mux) are obtained by using a new Y-parameter equation that is derived from a simplified "cut-off mode" equivalent circuit including ac current crowding capacitance. This new method is superior to several conventional ones, because it remains valid when there is ac emitter current crowding. The superiority of the new method has been verified by observing much better agreement of modeled gain with measured ones than the conventional method.

引用

页码：647 / 650

页数：4

共 10 条

[1] Direct method for bipolar base-emitter and base-collector capacitance splitting using high frequency measurements [J].

Ardouin, B ;

Zimmer, T ;

Mnif, H ;

Fouillat, P .

PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2001, :114-117

[2] Extraction of the base-collector capacitance splitting along the base resistance using HF measurements [J].

Berger, D ;

Gambetta, N ;

Céli, D ;

Dufaza, C .

PROCEEDINGS OF THE 2000 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2000, :180-183

[3] EXPERIENCE WITH THE NEW COMPACT MEXTRAM MODEL FOR BIPOLAR-TRANSISTORS [J].

DEGRAAFF, HC ;

KLOOSTERMAN, WJ ;

GEELEN, JAM ;

KOOLEN, MCAM .

PROCEEDINGS OF THE 1989 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, 1989, :246-249

[4] A COMPACT BIPOLAR-TRANSISTOR MODEL FOR VERY-HIGH-FREQUENCY APPLICATIONS WITH SPECIAL REGARD TO NARROW EMITTER STRIPES AND HIGH-CURRENT DENSITIES [J].

KOLDEHOFF, A ;

SCHROTER, M ;

REIN, HM .

SOLID-STATE ELECTRONICS, 1993, 36 (07) :1035-1048

[5] A novel approach to extracting small-signal model parameters of silicon MOSFET's [J].

Lee, S ;

Yu, HK ;

Kim, CS ;

Koo, JG ;

Nam, KS .

IEEE MICROWAVE AND GUIDED WAVE LETTERS, 1997, 7 (03) :75-77

[6]

LEE S, 2003, P IEEE INT C MICR TE, P133

[7] A NEW PARAMETER EXTRACTION TECHNIQUE FOR SMALL-SIGNAL EQUIVALENT-CIRCUIT OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS [J].

LEE, SH ;

RYUM, BR ;

KANG, SW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (02) :233-238

[8] DC AND AC CURRENT CROWDING EFFECTS MODEL ANALYSIS IN BIPOLAR JUNCTION TRANSISTORS USING A NEW EXTRACTION METHOD [J].

RHEE, HS ;

LEE, S ;

KIM, BR .

SOLID-STATE ELECTRONICS, 1995, 38 (01) :31-35

[9]

VERSLEIJEN MPJG, 1991, PROCEEDINGS OF THE 1991 BIPOLAR CIRCUITS AND TECHNOLOGY MEETING, P85, DOI 10.1109/BIPOL.1991.160962

[10]

WU DW, 1995, P EL PERF EL PACK M, P166

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