Effect of Na2S2O3 • 5H2O concentration on the properties of Cu2 ZnSn(S, Se)4 thin films fabricated by selenization of co-electroplated Cu-Zn-Sn-S precursors

被引：4

作者：

Ge Jie ^{[1
,2
]}

Jiang Jin-Chun ^{[1
,2
]}

Hu Gu-Jin ^{[2
,3
]}

Zhang Xiao-Long ^{[1
]}

Zuo Shao-Hua ^{[2
]}

Yang Li-Hong ^{[1
,2
]}

Ma Jian-Hua ^{[2
,3
]}

Cao Meng ^{[3
]}

Yang Ping-Xiong ^{[1
]}

Chu Jun-Hao ^{[1
,2
,3
]}

机构：

[1] E China Normal Univ, Dept Elect Engn, Key Lab Polar Mat & Devices, Shanghai 200241, Peoples R China

[2] Shanghai Ctr Photovolta, Shanghai 201201, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

来源：

JOURNAL OF INFRARED AND MILLIMETER WAVES | 2013年 / 32卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Cu2ZnSn(S; Se)(4) thin film; Na2S2O3 center dot 5H(2)O concentration; co-electroplating; selenization; SULFURIZATION; CU2SNSE3; GROWTH;

D O I：

10.3724/SP.J.1010.2013.00289

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Cu2ZnSn(S, Se)(4) films were fabricated through post-selenization of Cu-Zn-Sn-S precursors co-electroplated by varied Na2S2O3 center dot 5H(2)O concentrations. The property of obtained films before and after selenization shows a close dependence on the concentration of Na2S2O3 center dot 5H(2)O. Only the film grown by 5 mM of Na2S2O3 center dot 5H(2)O shows a uniform surface with faceted grains, a Zn-poor composition, a single phased Cu2ZnSn(S, Se)(4) structure and a 1.11 eV band gap evidencing by SEM, EDS, XRD, Raman and transmittance spectra. More than 5 mM of Na2S2O3 center dot 5H(2)O additive to the electrolyte yielded the films with rougher morphology and the presence of SnSex. Less than 5 mM of Na2S2O3 center dot 5H(2)O additive to the electrolyte resulted in the films with highly Zn-poor content and the primary formation of Cu2SnSe3.

引用

页码：289 / +

页数：6

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