Evaluation of relaxation and misfit dislocation blocking in strained silicon on virtual substrates

被引：4

作者：

Parsons, J. ^{[1
]}

Beer, C. S. ^{[1
]}

Leadley, D. R. ^{[1
]}

Capewell, A. D. ^{[2
]}

Grasby, T. J. ^{[1
]}

机构：

[1] Univ Warwick, Coventry CV4 7AL, W Midlands, England

[2] AdvanceSis Ltd, Coventry CV4 7EZ, W Midlands, England

来源：

THIN SOLID FILMS | 2008年 / 517卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

Strained silicon; Graded virtual substrates; Schimmel etchant; Misfit dislocations; Stacking faults; Burger's vector; Relaxation degree;

D O I：

10.1016/j.tsf.2008.08.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Relaxation of strained silicon on 20% linear graded virtual substrates has been quantified using a dilute Schimmel etchant to reveal dislocation content, and high-resolution X-ray diffraction. The thickness of strained silicon investigated ranged from 10-180 nm. Low levels of relaxation were observed in layers below the Matthews and Blakeslee critical thickness, increasing up to about 2% relaxation for the largest layer thickness. Stacking faults were observed in all but the 10 nm layer, as confirmed by cross-sectional transmission electron microscopy. Impediments to dislocation glide by misfit dislocations and stacking faults were quantified and offered as an explanation for the limited degree of relaxation observed. (c) 2008 Published by Elsevier B.V.

引用

页码：17 / 19

页数：3

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