Enhanced Performance of Solution-Processed TESPE-ADT Thin-Film Transistors

被引：7
作者：
Chen, Liang-Hsiang [1 ]
Hu, Tarng-Shiang [2 ]
Huang, Peng-Yi [2 ]
Kim, Choongik [3 ]
Yang, Ching-Hao [2 ]
Wang, Juin-Jie [2 ]
Yan, Jing-Yi [1 ]
Ho, Jia-Chong [1 ]
Lee, Cheng-Chung [1 ]
Chen, Ming-Chou [2 ]
机构：
[1] Ind Technol Res Inst, Display Technol Ctr, Proc Technol Div, Hsinchu, Taiwan
[2] Natl Cent Univ, Dept Chem, Jhongli 32054, Taiwan
[3] Sogang Univ, Dept Chem & Biomol Engn, Seoul 121742, South Korea
来源：
CHEMPHYSCHEM | 2013年 / 14卷 / 12期
基金：
新加坡国家研究基金会;
关键词：
anthradithiophene; electrochemistry; organic semiconductors; organic thin-film transistors; solution processes; FIELD-EFFECT TRANSISTORS; TRIETHYLSILYLETHYNYL ANTHRADITHIOPHENE; SOLUBLE ANTHRADITHIOPHENE; EFFECT MOBILITY; SURFACE-ENERGY; POLYMER; SEMICONDUCTORS; ELECTRON; DERIVATIVES; PENTACENE;
D O I：
10.1002/cphc.201300317
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
A solution-processed anthradithiophene derivative, 5,11-bis(4-triethylsilylphenylethynyl)anthradithiophene (TESPE-ADT), is studied for use as the semiconducting material in thin-film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin-coating and drop-casting) on various gate dielectrics as well as additional post-treatment are employed on thin films of TESPE-ADT, and p-channel OTFT transport with hole mobilities as high as approximate to 0.12 cm(2)V(-1)s(-1) are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.
引用
收藏
页码：2772 / 2776
页数：5
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