Evaluating InAs QD Lasers for Space Borne Applications

被引：0

作者：

O'Driscoll, I. ^{[1
]}

Blood, P. ^{[1
]}

Sobiesierski, A. ^{[1
]}

Gwilliam, R. ^{[2
]}

Smowton, P. M. ^{[1
]}

机构：

[1] Cardiff Univ, Sch Phys & Astron, Queens Bldg, Cardiff CF24 3AA, S Glam, Wales

[2] Univ Surrey, Adv Technol Inst, FEPS, Guildford GU2 7XH, Surrey, England

来源：

2012 23RD IEEE INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE (ISLC) | 2012年

关键词：

PROTON IRRADIATION; QUANTUM DOTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Decrease of photoluminescence with increasing dose is due to bombardment induced wetting layer non-radiative recombination. To exploit the relative radiation immunity of QD lasers one should maximise the QD density and capture probability per dot.

引用

页码：94 / +

页数：2

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